Browsing by Author "Huang, H. -F."
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Item type:Item, First Demonstration of CMOS Inverter and 6T-SRAM Based on GAA CFETs Structure for 3D-IC Applications(2019-01-01) ;Chang, S. -W. ;Sung, P. -J. ;Chu, T-Y. ;Lu, D. D.Wang, C. -J.For the first time, CMOS inverters and 6T-SRAM cells based on vertically stacked gate-all-around complementary FETs (CFETs) are experimentally demonstrated. Manufacturing difficulties of vertically stacked source and drain electrodes of the CFETs have been overcome by using junctionless transistors, thereby reducing the number of lithographic steps required. Furthermore, with post metallization treatments, both the voltage transfer characteristics (VTCs) of CMOS inverters and butterfly curves of SRAM show significant improvements due to the symmetry of nMOS and pMOS threshold voltages. Simulation shows that 3-dimensional CFET inverters have lower input parasitic capacitance than standard 2-dimensional CMOS, leading to reduced gate delay and lower power consumption.Item type:Item, Voltage Transfer Characteristic Matching by Different Nanosheet Layer Numbers of Vertically Stacked Junctionless CMOS Inverter for SoP/3D-ICs applications(2018-01-01) ;Sung, P. -J. ;Chang, C. -Y. ;Chen, L. -Y. ;Kao, K. -H.Su, C. -J.For the first time, CMOS inverters with different numbers of vertically stacked junctionless (JL) nanosheets (NSs) are demonstrated. All fabrication steps were below 600 degrees C, and 8-nm thick poly-Si NSs with smooth surface roughness were formed by a dry etching process. Compared to single channel devices, stacked n/p-channel FETs exhibit higher on-current with low leakage current. Furthermore, a common-gate process was performed for the fabrication of CMOS inverters. By adjusting the NS layer numbers for n/pFETs, respectively, the voltage transfer characteristics (VTCs) of the CMOS inverter can be matched much better to reduce the noise margin due to on-current matching without area penalty. This work experimentally demonstrates a new configuration of CMOS inverters on stacked NSs, which is promising for System-on-Panel (SoP) and 3D-ICs applications.