Browsing by Author "Huang, Hsi-Jung"

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Epitaxial single-crystal of GaSe epilayers grown on a c-sapphire substrate by molecular beam epitaxy
(2015-10-01)
Wu, Chia-Hsin
;
Yang, Chu-Shou
;
Wang, Yen-Chi
;
Huang, Hsi-Jung
;
Ho, Yen-Teng
In this study, hetero-epitaxy of GaSe epilayers on a c-sapphire substrate achieved using molecular beam epitaxy was demonstrated. The GaSe epitaxial growth was monitored using in situ reflection high-energy electron diffraction (RHEED). Streak RHEED patterns showed a flat and highly crystalline situation. Furthermore, two RHEED patterns were observed after 15min of growth, and they were correlated with the m-axis and a-axis of hexagonal GaSe. The single crystal of GaSe was verified using X-ray diffraction and high-resolution cross-section transmission electron microscopy. The full width at half-maximum of (0002) in the XRD rocking-curve spectrum of GaSe epilayer is obtain around 207arcsec, which is the smallest value observed to date. The epitaxial growth of GaSe demonstrated the feasibility of growing large-area epilayers.