Browsing by Author "Huang, Hsin-Wei"

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Field Emission and Superhydrophobic Properties of Electrochemically Grown Gold Nanourchins
(2012-08-01)
Huang, Ting-Kai
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Huang, Hsin-Wei
;
Lee, Chi-Young
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Chiu, Hsin-Tien
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應用化學系
"We demonstrate a convenient fabrication of Au nanourchins (NUs) on Si substrates via a surfactant-assisted galvanic reduction process. This synthetic method not only grows Au NUs on Si in a one-step process but also effectively controls the lengths of the branches on the NUs. The widths are about 100-120 nm and the lengths can be extended from 200 nm to 5 mu m by lengthening the growth time. With the advantage of a hierarchical surface structure, Au NUs exhibited excellent electron field emission (FE) performance (turn-on voltage, 6.3 V/mu m; beta, 1150). In addition, the wetting behavior examination shows that the water contact angle can be as high as 158 degrees on Au NUs after the material is treated by 1-hexadecanethiol."
Growth of high-aspect-ratio gold nanowires on silicon by surfactant-assisted galvanic reductions
(2008-06-03)
Huang, Ting-Kai
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Chen, Ying-Chieh
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Ko, Hsin-Chun
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Huang, Hsin-Wei
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Wang, Chia-Hsin
A simple galvanic reduction for direct growth of An nanowires on silicon wafers is developed. The nanowires were prepared by reacting HAuCl4(aq) with Sn-(s) in the presence of CTAC((aq)) (cetyltrimethylammonium chloride) and NaNO3(aq), which were important to the product morphology development. The nanowire diameter was 50-100 nm, and the length was more than 20 mu m.
van der Waal Epitaxy of Flexible and Transparent VO2 Film on Muscovite
(2016-06-14)
Li, Chien-I
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Lin, Jheng-Cyuan
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Liu, Heng-Jui
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Chu, Ming-Wen
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Chen, Hsiao-Wen
Vanadium dioxide (VO2) is a compelling candidate for next-generation electronics beyond conventional silicon-based devices due to the exhibition of a sharp metal insulator transition. In this study, in order to realize functional VO2 film for flexible electronics, the growth of VO2 film directly on a transparent and flexible muscovite via van der Waals epitaxy is established. The heteroepitaxy and structural transition of VO2 films on muscovite are examined by a combination of high resolution X-ray diffraction, transmission electron microscopy, and Raman spectroscopy. The unique metal insulator transition of VO2 is further revealed with a change in electrical resistance over 10(3) and a more than 50% variation of optical transmittance. Furthermore, due to the nature of muscovite, the VO2/muscovite heterostructure possesses superior flexibility and optical transparence. The approach developed in this study paves an intriguing way to fabricate functional VO2 film for the applications in flexible electronics.