Browsing by Author "Huang, Hung-Hsun"

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Abnormal polarization switching phenomenon in a-plane Al(x)Ga(1-x)N
(2010-10-11)
Huang, Huei-Min
;
Huang, Hung-Hsun
;
Wu, Yuh-Renn
;
Lu, Tien-Chang
;
光電工程學系
The optical polarization properties of a-plane Al(x)Ga(1-x)N films have been investigated by polarization-dependent photoluminescence (PL). The degree of polarization decreased with increasing the Al composition, and the main optical polarization direction switched from epsilon perpendicular to c to epsilon // c at about x = 0.07 due to the valence band switching, representing that the optical transition energy of epsilon // c is surpassing that of epsilon perpendicular to c. However, with the Al composition larger than x = 0.1, the higher energy optical transitions of epsilon // c exhibited the stronger PL intensity, opposite to the normal situations that higher energy states commonly have weaker PL intensity than the lower energy states. We utilized the 6 x 6 k.p model and the lambertian-like radiation pattern assumption to explain this abnormal optical polarization switching behavior in the a-plane Al(x)Ga(1-x)N layers and obtained good agreement with the experimental results. (C) 2010 Optical Society of America
Abnormal polarization switching phenomenon in a-plane Al(x)Ga(1-x)N
(2011-01-01)
Huang, Huei-Min
;
Huang, Hung-Hsun
;
Wu, Yuh-Renn
;
Lu, Tien-Chang
;
Kuo, Hao-Chung
The a-plane Al(x)Ga(1-x)N layers show abnormal optical polarization switching behavior. This phenomenon can be well characterized by the assumption of the lambertian-like radiation pattern and simulated by utilizing the 6 x 6 k . p model. (C) 2010 Optical Society of America
Abnormal polarization switching phenomenon in a-plane AlxGa1-xN
(2010-10-11)
Huang, Huei-Min
;
Huang, Hung-Hsun
;
Wu, Yuh-Renn
;
Lu, Tien-Chang
;
照明與能源光電研究所
The optical polarization properties of a-plane AlxGa1-xN films have been investigated by polarization-dependent photoluminescence (PL). The degree of polarization decreased with increasing the Al composition, and the main optical polarization direction switched from epsilon perpendicular to c to epsilon // c at about x = 0.07 due to the valence band switching, representing that the optical transition energy of epsilon // c is surpassing that of epsilon perpendicular to c. However, with the Al composition larger than x = 0.1, the higher energy optical transitions of epsilon // c exhibited the stronger PL intensity, opposite to the normal situations that higher energy states commonly have weaker PL intensity than the lower energy states. We utilized the 6 x 6 k.p model and the lambertian-like radiation pattern assumption to explain this abnormal optical polarization switching behavior in the a-plane AlxGa1-xN layers and obtained good agreement with the experimental results. (C) 2010 Optical Society of America
Abnormal polarization switching phenomenon in a-plane AlxGa1-xN
(2011-01-01)
Huang, Huei-Min
;
Huang, Hung-Hsun
;
Wu, Yuh-Renn
;
Lu, Tien-Chang
;
Kuo, Hao-Chung
The a-plane AlxGa1-xN layers show abnormal optical polarization switching behavior. This phenomenon can be well characterized by the assumption of the lambertian-like radiation pattern and simulated by utilizing the 6 x 6 k . p model. (C) 2010 Optical Society of America