Browsing by Author "Huang, J. H."

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Distribution of electronic reconstruction at the n-type LaAlO(3)/SrTiO(3) interface revealed by hard x-ray photoemission spectroscopy
(2011-12-26)
Chu, Y. Y.
;
Liao, Y. F.
;
Tra, V. T.
;
Yang, J. C.
;
Liu, W. Z.
We investigated the electronic reconstruction at the n-type LaAlO(3)/SrTiO(3) interface with hard x-ray photoelectron spectroscopy (HAXPES) under grazing incidence. By exploiting the collapse of evanescent x-ray waves and the abrupt increase of x-ray absorption at the critical incidence angle, our HAXPES study reveals a 2% electronic reconstruction from Ti(4+) to Ti(3+) occurring near the interface. Such an electronic reconstruction also extends from the interface into SrTiO(3) with a depth of about 48 angstrom (similar to 12 unit cells) and an estimated total charge transfer of similar to 0.24 electrons per two-dimensional unit cell. (C) 2011 American Institute of Physics. [doi:10.1063/1.3672099]
Distribution of electronic reconstruction at the n-type LaAlO3/SrTiO3 interface revealed by hard x-ray photoemission spectroscopy
(2011-12-26)
Chu, Y. Y.
;
Liao, Y. F.
;
Tra, V. T.
;
Yang, J. C.
;
Liu, W. Z.
We investigated the electronic reconstruction at the n-type LaAlO3/SrTiO3 interface with hard x-ray photoelectron spectroscopy (HAXPES) under grazing incidence. By exploiting the collapse of evanescent x-ray waves and the abrupt increase of x-ray absorption at the critical incidence angle, our HAXPES study reveals a 2% electronic reconstruction from Ti4+ to Ti3+ occurring near the interface. Such an electronic reconstruction also extends from the interface into SrTiO3 with a depth of about 48 angstrom (similar to 12 unit cells) and an estimated total charge transfer of similar to 0.24 electrons per two-dimensional unit cell. (C) 2011 American Institute of Physics. [doi:10.1063/1.3672099]
Investigations of organic light emitting diodes with CdSe(ZnS) quantum dots
(2008-02-15)
Lee, C. W.
;
Chou, C. H.
;
Huang, J. H.
;
Hsu, C. S.
;
Nguyen, T. P.
In this study, we report results on investigation of bilayer light emitting diodes made of organic capped CdSe(ZnS) core/shell type nanocrystals and poly [2-phenyl-3-(9,9-dihexyl-fluoren-2-yl) phenylene vinylene]-co-[2-methoxy-5-(2'-ethylhexyloxy) phenylene vinylene] (FP-PPV-co-MEH-PPV) electroluminescent co-polymer. Light emitting diodes of structure: indium-tin-oxide (ITO)/polyethylene dioxythiophene: polystyrene sulfonate (PEDOT:PSS)/FP-PPV-co-MEH-PPV/Ca/Al devices have been fabricated and studied. The co-polymer device emits a yellow light with a maximum brightness of 3949 cd/m(2) and a maximum external quantum efficiency of 0.27 cd/A at 10 V. Incorporation of CdSe(ZnS) quantum dots into the active polymer film resulted in an increase in device brightness, which reached 8192 cd/m(2) and in external quantum efficiency, which became 1.27 cd/A at 7 V with a lower turn-on voltage. The results indicate that CdSe(ZnS) quantum dots improved significantly the emission of the devices by modifying the injection and transport of the charge carriers. We suggest a non-uniform dispersion of QDs in the co-polymer layer with carrier blocking process by the particles, which produced a balanced charge distribution inside the co-polymer, and thus increased the emission efficiency. (c) 2007 Elsevier B.V. All rights reserved.
Structural Design, Process, and Reliability of a Wafer-Level 3D Integration Scheme with Cu TSVs Based on Micro-bump/Adhesive Hybrid Wafer Bonding
(2012)
Ko, C. T.
;
Hsiao, Z. C.
;
Chang, Y. J.
;
Chen, P. S.
;
Huang, J. H.
In this study, a wafer-level 3D integration scheme with Cu TSVs based on Cu/Sn micro-bump and BCB adhesive hybrid bonding is demonstrated. To realize the signal transmission effects in high speed digital signaling via Cu TSV and Cu/Sn micro-joint interconnection, the insertion loss was investigated by simulation analysis with variable TSV pitches, micro-bump diameters and chip thicknesses. Key technologies include TSV fabrication, micro-bumping, hybrid scheme making, hybrid bonding, wafer thinning and backside RDL formation were well developed and integrated to perform the 3D integration scheme. 5 mu m TSV, 10 mu m microbump, 20 mu m pitch, 40 mu m thin wafer, and 250 degrees C low temperature W2W hybrid bonding have been successfully integrated in the integration platform. The 3D scheme was characterized and assessed to have excellent electrical performance and reliability, and is potentially to be applied for 3D product applications.