Browsing by Author "Huang, JCM"

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Fabrication and characterization of diamond-clad silicon field emitter arrays
(1995-12-01)
Cheng, HC
;
Ku, TK
;
Hsieh, BB
;
Chen, SH
;
Leu, SY
Microsized silicon tip arrays with sharp curvature were formed based on the techniques including reactive ion etching and oxidation-sbarpening. A new fabrication technology of polycrystalline diamond-clad Si microtips using microwave plasma CVD(MPCVD) was subsequently developed to improve the capability and stability of the field emission from the pure Si tips. By means of SEM and transmission electron microscopy (TEM), the as-deposited films are found to be polycrystalline diamond with fine grain (similar to 800 Angstrom) structure. With the anode voltage of 1100V and anode-to-cathode distance of 30 mu m, the emission current of 240 mu A in a 50 x 50 diamond-clad Si microtip array can be achieved, which is much higher than those for Cr-clad and pure Si microtip arrays. Based on curve fitting of a Fowler-Nordheim (F-N) plot, such great improvement is partially attributed to the lowering of the effective work function from 5.5 eV to 2.08 eV.
Luminescent properties of sol-gel prepared Y3Al5O12:Tb thin films
(1996)
Lo, JR
;
Tseng, TY
;
Tyan, JH
;
Huang, JCM
;
交大名義發表
A series of Tb-activated Y3Al5O12 films have been fabricated by spin coating on silicon substrate with sol-gel solutions. The formation of a single garnet phase is observed at 800 degrees C for 1 h in rapid thermal annealing furnace. The emission spectrum of the films induced by ultraviolet(UV) and electron excitations show the D-5 to F-6 transition and consisted of two groups, D-5(3) to F-6(before 485nm) and D-5(4) to 6F(after 485nm). The emission intensities of the films are dependent on the Tb concentrations.
Thin oxides with in situ native oxide removal
(1997-09-01)
Chin, A
;
Chen, WJ
;
Chang, T
;
Kao, RH
;
Lin, BC
We have studied the inversion layer mobility of n-MOSFET's with thin-gate oxide of 20 to 70 Angstrom. Direct relationship of electron mobility to oxide/channel interface roughness was obtained from measured mobility of MOSFET's and high-resolution TEM. By using a low-pressure oxidation process with native oxide removed in situ prior to oxidation, atomically smooth interface of oxide/channel was observed by high-resolution TEM for oxide thicknesses of 11 and 38 Angstrom. The roughness increased to one to two monolayers of Si in a 55-Angstrom oxide. Significant mobility improvement was obtained from these oxides with smoother interface than that from conventional furnace oxidation. Mobility reduction with decreasing oxide thickness was observed in the 20- and 35-Angstrom oxide, with the same atomically smooth oxide/channel interface. This may be due to the remote Coulomb scattering from gate electrode or the gate field variation from poly-gate/oxide interface roughness.
Thin oxides with in situ native oxide removal
(1997-09-01)
Chin, A
;
Chen, WJ
;
Chang, T
;
Kao, RH
;
Lin, BC
We have studied the inversion layer mobility of n-MOSFET's with thin-gate oxide of 20 to 70 Angstrom. Direct relationship of electron mobility to oxide/channel interface roughness was obtained from measured mobility of MOSFET's and high-resolution TEM. By using a low-pressure oxidation process with native oxide removed in situ prior to oxidation, atomically smooth interface of oxide/channel was observed by high-resolution TEM for oxide thicknesses of 11 and 38 Angstrom. The roughness increased to one to two monolayers of Si in a 55-Angstrom oxide. Significant mobility improvement was obtained from these oxides with smoother interface than that from conventional furnace oxidation. Mobility reduction with decreasing oxide thickness was observed in the 20- and 35-Angstrom oxide, with the same atomically smooth oxide/channel interface. This may be due to the remote Coulomb scattering from gate electrode or the gate field variation from poly-gate/oxide interface roughness.
Ultra-thin oxide with atomically smooth interfaces
(1995)
Chin, A
;
Chen, WJ
;
Kao, RH
;
Lin, BC
;
Chang, T
Native oxide is an important issue for ultra-thin oxide, which is strongly related to the gate oxide integrity such as Q(BD), interface scattering, etc. We have designed a leak-tight low-pressure oxidation system to desorb the native oxide in-situ. Atomically flat interfaces between oxide and Si are obtained for oxide thicknesses of 11 and 38 Angstrom. Because of the smooth interface and good thickness uniformity of oxide, both high-field electron mobility and oxide breakdown behavior are much improved.
Ultrathin N2O-oxide with atomically flat interfaces
(1997-05-01)
Chin, A
;
Chen, WJ
;
Lin, BC
;
Kao, JH
;
Tsai, C
Silicon oxide has been grown in a low pressure furnace using N2O. An atomically fiat SiO2 (N2O)/Si interface, as determined by high resolution transmission electron microscopy, has been achieved by desorbing the native oxide in situ for oxide thicknesses 11 to 38 Angstrom. The thickness variation of a 20 Angstrom N2O-oxide, grown on a 4 in. substrate <1 Angstrom. The excellent uniformity is attributed to the increased mean-free path of N2O molecules in the low pressure environment. Since only one Si plane was distorted beneath the N2O-oxide/Si interface, this suggests that thermal stress is not the limiting factor for obtaining an atomically smooth interface.
Ultrathin N2O-oxide with atomically flat interfaces
(1997-05-01)
Chin, A
;
Chen, WJ
;
Lin, BC
;
Kao, JH
;
Tsai, C
Silicon oxide has been grown in a low pressure furnace using N2O. An atomically fiat SiO2 (N2O)/Si interface, as determined by high resolution transmission electron microscopy, has been achieved by desorbing the native oxide in situ for oxide thicknesses 11 to 38 Angstrom. The thickness variation of a 20 Angstrom N2O-oxide, grown on a 4 in. substrate <1 Angstrom. The excellent uniformity is attributed to the increased mean-free path of N2O molecules in the low pressure environment. Since only one Si plane was distorted beneath the N2O-oxide/Si interface, this suggests that thermal stress is not the limiting factor for obtaining an atomically smooth interface.