Browsing by Author "Huang, JS"

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A novel microscopic modeling on hysteresis effects on piezoelectric structures with assistance from finite element
(2006)
Chao, PCP
;
Liao, PY
;
Huang, JS
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電控工程研究所
;
Institute of Electrical and Control Engineering
A novel microscopic modeling technique is proposed to study the hysteresis effects on piezoeeramic materials and structures using finite element method and a modified Preisach model where polarization term is added in the constitutive relationship to describe the microscopic hysteresis effects. A simple bimorph piezoceramic beam is used as an example to illustrate the effectiveness of the present theory. The established modeling procedure is applicable to arbitrary piezoelectric structures.
On-chip bus encoding for LC cross-talk reduction
(2005)
Huang, JS
;
Tu, SW
;
Jou, JY
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電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
With the continuous shrinkage of device sizes, the global interconnect delay becomes a dominant factor of chip performance in deep-submicron technology. Furthermore, as the working frequency of integrated circuits increasing above GHz, the inductive crosstalk will also have very significant influence on the global interconnect delay. However, most existing works consider only RC effects (the worst-case switching pattern resulting from coupling capacitance), to develop their encoding schemes to reduce bus delay. In this paper, we propose a flexible bus encoding method to reduce the LC coupling delay on on-chip bus with a user-given bus structure, the working frequency, and the delay constraint. Simulation results show that our encoding method can significantly reduce the coupling delay of a bus according to the delay constraint.
Study of titanium tungsten nitride and tungsten nitride Schottky contacts on n-GaN
(2003-07-01)
Lee, CS
;
Chang, EY
;
Chang, L
;
Fang, CY
;
Huang, YL
The Schottky diode behaviors of the TiWNx and the WNx Schottky contacts to n-GaN were investigated at different annealing temperatures. Both TiWNx and WNx films were deposited by the reactive DC sputtering method. The WNx/n-GaN contact exhibited excellent electrical characteristics even after rapid-thermal annealing up to 850degreesC for 10s. The ideality factor and barrier height remained 1.09 and 0.8OeV, respectively, after 850degreesC annealing. However, the TiWNx/n-GaN contact was thermally stable only up to 650degreesC annealing; the values of the ideality factor and the barrier height were 1.14 and 0.76 eV, respectively, after 650degreesC annealing and started to degrade when annealed at higher temperatures. The deterioration of the TiWNx/n-GaN contact at higher temperatures was due to the inter-diffusion of the TiWN film and the GaN material.