Browsing by Author "Huang, JY"

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A common buffer-based approach to buffer management for a wafer fabrication factory
(1998-09-01)
Huang, JY
;
Sha, DY
;
工業工程與管理學系
;
Department of Industrial Engineering and Management
This paper presents a buffer management method for a wafer fabrication factory. A pull-based production control system (PPCS) is adopted to handle production activity control (PAC) and reduce the work-in-progress (WIP) level. In addition, a common buffer approach is used to further control WIP conditions and utilize limited storage space effectively. Simulation results show that the proposed buffer management method significantly reduces buffer storage space. Besides, it also maintains the manufacturing system's performance roughly equal to that provided by a local buffer scheme. Significance: The proposed buffer management method can handle production activity control, reduce the WIP level, control WIP conditions, and effectively utilize limited storage space. In addition, the method is easy to implement in a practical application.
A real-time poling approach for preparing second-order nonlinear optical polymer thin films
(1997-07-30)
Jou, JH
;
Wu, HS
;
Chiou, JF
;
Yang, PK
;
Huang, JY
A new real-time poling approach for preparing second-order nonlinear optical (NLO) polymer thin films is presented. The presented method may be conveniently applied to many polymer thin film systems without going through the complicated conventional synthesis and poling procedures. This method, which is proven in this work to be feasible experimentally, is done by simultaneously co-depositing a NLO active dye, disperse red 1 and two polyamide thin film forming monomers on a gold electrodes pre-patterned glass substrate while concurrently applying an electrical field for poling. A second harmonic generation (SHG) signal is detected from the resultant thin films at a very low poring field ranging from 0.01 to 0.1 MV/cm which increases in intensity as the poling field increases. (C) 1997 Elsevier Science S.A.
A real-time poling approach for preparing second-order nonlinear optical polymer thin films
(1997-07-30)
Jou, JH
;
Wu, HS
;
Chiou, JF
;
Yang, PK
;
Huang, JY
A new real-time poling approach for preparing second-order nonlinear optical (NLO) polymer thin films is presented. The presented method may be conveniently applied to many polymer thin film systems without going through the complicated conventional synthesis and poling procedures. This method, which is proven in this work to be feasible experimentally, is done by simultaneously co-depositing a NLO active dye, disperse red 1 and two polyamide thin film forming monomers on a gold electrodes pre-patterned glass substrate while concurrently applying an electrical field for poling. A second harmonic generation (SHG) signal is detected from the resultant thin films at a very low poring field ranging from 0.01 to 0.1 MV/cm which increases in intensity as the poling field increases. (C) 1997 Elsevier Science S.A.
A simple chemical etching technique for reproducible fabrication of robust scanning near-field fiber probes
(1998-02-01)
Chuang, YH
;
Sun, KG
;
Wang, CJ
;
Huang, JY
;
Pan, CL
A two-step chemical etching procedure has been developed for fabricating probes used by scanning near-field optical microscopy. These probes have two tapered regions which can be reproducibly constructed with a wide range of cone angles. The shape of the probe allows it to be used over sample surfaces with deep and narrow regions. Furthermore, our method can be applied to silica glass fibers which are commercially available. To demonstrate, we used these tips to acquire the near-field optical image of a thin layer of polystyrene spheres. Intensity interference patterns were observed. The demonstrated in-plane resolution was estimated to be about 250 nm. This is mainly limited by the diameter of the metal-coated tip. The transmission efficiency of the tip is better than 10(-4). (C) 1998 American Institute of Physics.
Ab initio study of the structural and optical properties of orthorhombic ternary nitride crystals
(2001-11-19)
Huang, JY
;
Tang, LC
;
Lee, MH
;
光電工程學系
;
Department of Photonics
The structural, optical and mechanical properties of orthorhombic ternary nitride crystals have been analysed theoretically with first-principles calculation. Our results indicate that these nitrides possess fairly large optical bandgap (4-6 eV), second-order nonlinear optical susceptibility (13-18 pm V-1), and bulk modulus 170-370 GPa. Therefore these materials could be useful for optical and protective coating applications. Our analysis with the band-by-band and atomic species projection techniques not only yields useful information about material properties, but also provides deep insight into the fundamental understanding of the mechanical and optical properties of orthorhombic ternary nitrides.
An inexpensive diode-pumped mode-locked Nd : YVO4 laser for nonlinear optical microscopy
(2000-01-01)
Yang, PK
;
Huang, JY
;
光電工程學系
;
Department of Photonics
We report an inexpensive diode-pumped Nd:YVO4 laser mode-locked with combined effects of nonlinear mirror (NLM) and cascaded second-order optical nonlinearities (CSON) in a KTP crystal. Detailed analysis, which takes into account the transverse effect of cavity modes, shows that the CSON effect dominates the mode locking process. The resulting self-defocusing lens couples with an aperture appearing in the gain medium and then produces a cavity loss modulation. The mode locking self starts at a pump power of 2.2 W with a 35% transmission output coupler and generates pulses with a duration of 14 ps and an averaged power of 350 mW. The laser was shown to be useful for probing polar structures of nonlinear optical materials with second harmonic microscopy. (C) 2000 Elsevier Science B.V. All rights reserved.
Cation substitution effects on structural, electronic and optical properties of nonlinear optical AgGa(SxSe1-x)(2) crystals
(2003-09-10)
Tang, LC
;
Lee, MH
;
Yang, CH
;
Huang, JY
;
Chang, CS
The structural, electronic and optical properties of tetragonal nonlinear optical (NLO) crystals, AgGa(SxSe1-x)(2) (x = 0.0, 0.25, 0.5, 0.75, and 1.0), were investigated theoretically and experimentally. The results obtained indicated that the electronic bandgaps, optical properties and bulk moduli of these compounds were linearly dependent on the substitution concentration of cations. From partial density of state analysis, it was found that the electronic states near the band edges of AgGa(SxSe1-x)(2) were a simple proportional mixture of the atomic orbitals of sulfur and selenium. A cell-volume effect was proposed as the major cause of the linear dependence of material properties on the substitution concentration. It was calculated that the second-order NLO susceptibilities were scaled with the cubic power of bandgap, although a minor deviation existed. This deviation arose from the optical transition moment products.
Coherent control multiphoton processes in semiconductor saturable Bragg reflector with freezing phase algorithm
(2005-03-01)
Chen, MC
;
Huang, JY
;
Chen, LJ
;
光電工程學系
;
Department of Photonics
A freezing phase concept has been proposed for adaptive coherent control with a femtosecond pulse shaper. We applied the scheme to investigate multiphoton processes in InAs quantum dot saturable Bragg reflector (SBR). The optical transition of InAs quantum dots can be revealed in the spectral phase sensitivity plot of second harmonic signal. We also achieved a three-time increase in image contrast on regions with photoluminescent wavelength differing only 18 nm by using coherent control nonlinear optical microscopy. Our results suggest the new freezing phase scheme to be useful for various investigations which require fast and reliable complete-field characterization and coherent control on one setup.
Constructing procedures of an effective production activity control technique for a wafer fabrication environment
(1998-09-01)
Huang, JY
;
Sha, DY
;
工業工程與管理學系
;
Department of Industrial Engineering and Management
This paper presents a flexible production activity control (PAC) technique for a wafer fabrication factory. To resolve PAC problems in extremely complicated wafer fabrication processes, the proposed pull-based production control system (PPCS) integrates concepts of the conventional pull (kanban) system, push system, and drum-buffer-rope (DBR) scheduling technique. A kanban number calculating algorithm is also derived in which the kanban number calculated functions as an initial solution of the simulation run to obtain the optimal solution. Simulation results demonstrate that the PPCS yields a better performance than the conventional pull system and push system. Significance: Wafer fabrication is the most important but complicated process in the semiconductor manufacturing industry. The PPCS proposed herein simultaneously increases key machine utilization and decreases the WIP inventory level of a wafer fabrication factory, thereby fulfilling the PAC task.
Design and implementation of an OA&M system for WLL network
(2000-09-01)
Huang, JY
;
Tsai, HM
;
Lin, YB
;
Tseng, CC
;
資訊工程學系
This paper describes the design and implementation of an OA&M system for DECT-based WLL network. This system follows the client-server architecture that enables remote management through the Internet, Object-oriented design is used to yield quality software, where the entire WLL network is treated as a hierarchical collection of objects. The "plug-in" mechanism provides the capabilities of replacing and extending OA&M functionalities in run-time, Design patterns are applied to improve the reusability of software components. Two types of user interfaces are implemented in different platforms to provide access to the OA&M system, Although our design is tailored for the WLL network, it is also appropriate to serve as the OA&M system for other small-scale telecommunication systems.
Effect of the orientation of CdSe nanorods on the electron mobility of CdSe/P4VP nanodomains self-assembled within a poly(styrene-b-(4)-vinyipyridine) diblock copolymer thin film
(2006-03-01)
Li, CP
;
Yeh, SW
;
Chang, HC
;
Huang, JY
;
Wei, KH
Electronic structure and optical properties of rhombohedral CsGeI3 crystal
(2000-10-30)
Tang, LC
;
Chang, CS
;
Huang, JY
;
光電工程學系
;
Department of Photonics
We analyse the electronic structure of the perovskite crystal CsGeI3 by means of first-principles calculations and compare our findings to experimental results. Our calculation indicates that CsGeI3 has a direct-transition gap of 0.74 eV at (k) over right arrow = (pi /a)(111). The top of the valence bands was found to mainly comprise the 5p orbitals of iodine, while the bottom of the conduction bands is dominated by the 4p orbital of germanium. Photoluminescence (PL) measurements on a single crystal of CsGeI3 indicate two peaks, one at 0.82 mum (1.51 eV) and the other at 1.15 mum (1.08 eV). The shorter-wavelength PL peak is assigned as arising from an interband transition at (k) over right arrow = (pi /a)(111) and the longer-wavelength PL is presumably ascribable as originating from a transition involving an energy level within the fundamental band gap. Fourier-transformed infrared spectroscopy reveals that the transparent range of CsGeI3 could extend from similar to2 mum to >12 mum The short-wavelength cut-off is mainly limited by the energy band gap, while the long-wavelength limit possibly originates from lattice phonon absorption. Raman spectra of the crystal exhibit two major peaks at 105 cm(-1) and 151 cm(-1) and the corresponding overtones at 220 cm(-1) and 293 cm(-1).
Enhanced collective electron transport by CdSe quantum dots confined in the poly(4vinylpyridine) nanodomains of a poly(styrene-b-4-vinylpyridine) diblock copolymer thin film
(2006)
Li, CP
;
Wei, KH
;
Huang, JY
;
材料科學與工程學系
;
光電工程學系
Enhanced electroluminescence of poly(2-methoxy-5-(2 '-ethylhexyloxy)-1, 4-phenylene vinylene) films in the presence of TiO2 nanocrystals
(2006-06-01)
Weng, CC
;
Chou, CH
;
Wei, KH
;
Huang, JY
;
材料科學與工程學系
We demonstrated that in a nanocrystalline TiO2/poly(2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylene vinylene) (MEH-PPV) composite, electroluminescence of this composite is enhanced via addition of TiO2 nanoneedles. The TiO2 nanoneedles enhance the partial crystallization of MEH-PPV around TiO2, which in turn causes a decrease in the hole barrier height and an increase in hole mobility. The I-V measurement was established on an indium tin oxide/MEH-PPV:TiO2/Al device to identify the electrical properties of the composites.
Erbium doped GaSe crystal for mid-IR applications
(2006-06-12)
Hsu, YK
;
Chen, CW
;
Huang, JY
;
Pan, CL
;
光電工程學系
We reported a type-I difference-frequency generator (DFG), based on erbium doped GaSe (Er: GaSe) crystals as a coherent infrared source tunable from 2.4 mu m to 28 mu m. The two mixing beams used for the DFG are a tunable near infrared output (1.1-1.8 mu m) from an optical parametric amplifier (OPA) and the fundamental beam of a picosecond Nd: YAG laser at 1.064 mu m. The system can produce a maximum output pulse energy of 5 mu J at wavelength of 3.5 mu m, corresponding to a photon conversion efficiency of 8% at a pump intensity of 1.7 GW/cm(2). The nonlinear coefficient (d(eff)) of 0.5 atom % erbium doped GaSe crystal was found to be 55.3 pm/V or 24 % higher than that of a pure GaSe crystal. The improvement of deff is attributed to the substitutive and interstitial doping of Er ion in GaSe unit cell. The optical properties of GaSe influenced by the erbium doping are also presented. (c) 2006 Optical Society of America.
Field-induced reorientation dynamics of a surface stabilized ferroelectric liquid crystal mixture
(2004-03-01)
Shih, WT
;
Huang, JY
;
Zhang, JY
;
光電工程學系
;
Department of Photonics
Time-resolved measurements of electro-optical response and Fourier-transform infrared absorption have been employed to study the submolecular motion of a surface stabilized ferroelectric liquid crystal (SSFLC) mixture during a field-induced reorientation process. All observed submolecular groups were found to rotate in unison about the layer normal in a steady d.c. field. In a transient situation, the FLC director can respond rapidly to a pulsed driving field. However, the orientation distribution was found to spread at first and then slowly converge to the new direction of the FLC director. When the field is switched off, all the core groups relax to a steady-state direction with varying relaxation times. The results reveal that submolecular fragments of different molecular species in the FLC mixture move correlatively in a steady d.c. field and during a field-induced reorientation process.
Generation of femtosecond laser pulses tunable from 380 nm to 465 nm via cascaded nonlinear optical mixing in a noncollinear optical parametric amplifier with a type-I phase matched BBO crystal
(2003-07-14)
Lee, CK
;
Zhang, JY
;
Huang, JY
;
Pan, CL
;
光電工程學系
We report the generation of tunable femtosecond pulses from 380nm to 465nm near the degenerate point of a 405-nm pumped type-I BBO noncollinearly phase-matched optical parametric amplifier (NOPA). The tunable UV/blue radiation is obtained from sum frequency generation (SFG) between the OPA output and the residual fundamental beam at 810-nm and cascaded second harmonic generation (SHG) of OPA. With a fixed seeding angle, the generated SFG and SHG covers from 385 nm to 465-nm. With a pumping energy of 75 muJ at 405 nm, the optical conversion efficiency from the pump to the tunable SFG is more than 5% and the efficiency of SHG of the OPA is about 2%. (C) 2003 Optical Society of America.
Intense picosecond infrared pulses tunable from 2.4-m to 38-m for nonlinear optics applications
(2005)
Chen, CW
;
Hsu, YK
;
Huang, JY
;
Chang, CS
;
Pan, CL
We report an intense picosecond infrared light source on microjoule energy level, widely tunable in the 2.4 - 38. m with pulse durations similar to 5ps by DFG in GaSe. The maximum photon conversion efficiency is greater than 43%.
Linewidth-deduction method for nonlinear optical spectroscopy with transform-limited light pulses
(1998-03-01)
Yang, PK
;
Huang, JY
;
光電工程學系
;
Department of Photonics
We have developed a Fourier-deconvolution-based linewidth-deduction method for nonlinear optical spectroscopy with transform-limited light pulses. The phase-retrieval problem involved in this method was solved with a phase-retrieval procedure based on the maximum-entropy model. Our proposed method can also help one to surpass the resolution limit set by the uncertainty principle when the amplitude line-shape function of the laser source can be fully predetermined. (C) 1998 Optical Society of America [S0740-3224(98)00303-8].
Memory properties of metal/ferroelectric/semiconductor and metal/ferroelectric/insulator/semiconductor structures using rf sputtered ferroelectric Sr0.8Bi2.5Ta1.2Nb0.8O9 thin films
(2004-07-01)
Huang, CH
;
Wang, YK
;
Lue, HT
;
Huang, JY
;
Lee, MZ
Off-axis rf magnetron sputtering has been employed to grow Sr0.8Bi2.5Ta1.2Nb0.8O9 (SBTN) ferroelectric thin films with (115) preferred orientation on SiO2/Si and Si substrates. The lower temperature and the higher oxygen mixing ratios [OMR, O-2/ (Ar+O-2)] used in film processing lead to reduction in the leakage current densities and widening the memory window of the resultant metal-ferroelectric-insulator semiconductor (MRS) structures. The maximum memory windows of the MFIS structures based on 40% OMR SBTN films deposited at 500 degreesC on SiO2/Si substrate are 2.87 and 2.27 V at the bias amplitudes of 10 and 8 V, respectively. With increasing applied voltage, the memory window also increases. The memory window decreases from 2.27 to 1.59 V after the 10(11) switching cycles at a bias amplitude of 8 V. The capacitance difference, DeltaC, between the two states decreases by 48% after retention time of 7000 s. (C) 2003 Elsevier Ltd. All rights reserved.