Browsing by Author "Huang, Jheng-Jie"

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Dual operation characteristics of resistance random access memory in indium-gallium-zinc-oxide thin film transistors
(2014-04-14)
Yang, Jyun-Bao
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Chang, Ting-Chang
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Huang, Jheng-Jie
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Chen, Yu-Chun
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Chen, Yu-Ting
In this study, indium-gallium-zinc-oxide thin film transistors can be operated either as transistors or resistance random access memory devices. Before the forming process, current-voltage curve transfer characteristics are observed, and resistance switching characteristics are measured after a forming process. These resistance switching characteristics exhibit two behaviors, and are dominated by different mechanisms. The mode 1 resistance switching behavior is due to oxygen vacancies, while mode 2 is dominated by the formation of an oxygen-rich layer. Furthermore, an easy approach is proposed to reduce power consumption when using these resistance random access memory devices with the amorphous indium-gallium-zinc-oxide thin film transistor. (C) 2014 AIP Publishing LLC.
Enhancement of the stability of resistive switching characteristics by conduction path reconstruction
(2013-07-22)
Huang, Jheng-Jie
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Chang, Ting-Chang
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Yu, Chih-Cheng
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Huang, Hui-Chun
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Chen, Yu-Ting
In this study, a Pt/BiFeO3/TiN device was fabricated and the resistance switching characteristics were investigated. After the first forming process, the conduction path was formed and exhibited unstable bipolar switching characteristics. Subsequently, the original conduction path was destroyed thoroughly by high negative bias. By reconstructing the conduction path after a second forming process (re-forming process), the device exhibits stable bipolar switching characteristics. Transmission electron microscopy analysis indicates that the stability of switching behavior was enhanced because of the joule heating effect, and is an easy way to improve the resistance switching characteristics. (C) 2013 AIP Publishing LLC.
Impact of Electroforming Current on Self-Compliance Resistive Switching in an ITO/Gd:SiOx/TiN Structure
(2013-07-01)
Tseng, Hsueh-Chih
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Chang, Ting-Chang
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Wu, Yi-Chun
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Wu, Sei-Wei
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Huang, Jheng-Jie
This letter investigates self-compliance behavior for nonvolatile resistance random access memory using the indium tin oxide (ITO)/Gd:SiOx/TiN structure. Different current compliances in the electroforming process results in different trends in the set process, including a different self-compliance scale and one-or two-step set behaviors. The oxygen ions generated during the electroforming and set process drift to ITO, inducing a semiconductor-like ITO interface formation, which can be regarded as a self-built series resistor.
Influence of forming process on resistance switching characteristics of In2O3/SiO2 bi-layer
(2013-01-15)
Huang, Jheng-Jie
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Chang, Ting-Chang
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Yang, Po-Chun
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Chen, Yu-Ting
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Tseng, Hsueh-Chih
In this study, we fabricated and analyzed resistance switching characteristics for resistance random access memory (RRAM) in a Pt/In2O3/SiO2/TiN structure. By applying opposing electric fields to performa soft breakdown of the In2O3/SiO2 insulating bi-layer, different switching behaviors are exhibited. When positive forming voltage was applied to the TiN electrode to soft breakdown the device, the resistance switching behavior was dominated by the bipolar mode. However, the negative voltage forming process exhibited both unipolar switching characteristics in addition to a bipolar switch mode. In order to analyze the composition of the conduction path and resistance switching mechanism, resistance value trends versus temperature was extracted and showed that the conduction paths of bipolar and unipolar modes are dominated by oxygen vacancies and metallic filament, respectively. Hence, metallic filament was considered to be formed by the migration of indium ions because the unipolar characteristic was only present during negative bias forming condition. (c) 2012 Elsevier B.V. All rights reserved.
Influence of molybdenum doping on the switching characteristic in silicon oxide-based resistive switching memory
(2013-01-28)
Chen, Yu-Ting
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Chang, Ting-Chang
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Huang, Jheng-Jie
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Tseng, Hsueh-Chih
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Yang, Po-Chun
This report compares Mo-doped and undoped SiO2 thin films of a similar thickness as well as MoOx. The Mo-doped SiO2 film exhibited switching behavior after the forming process, unlike the undoped SiO2 film. Through material analyses, a self-assembled layer is observed in the Mo-doped SiO2 film. Due to the formation of this layer, the thickness required to be broken down is effectively reduced. Subsequently, the occurrence of the switching behavior in the thinner SiO2 film further confirmed the supposition. A comparison of the two switching behaviors shows that SiO2 dominates the switching characteristic of the Mo-doped SiO2. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4790277]
Influence of Oxygen Concentration on Resistance Switching Characteristics of Gallium Oxide
(2012-10-01)
Huang, Jheng-Jie
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Chang, Ting-Chang
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Yang, Jyun-Bao
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Chen, Shih-Ching
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Yang, Po-Chun
In this letter, we fabricated resistance random access memory in a Pt/GaOx/TiN structure with a bipolar resistance switching characteristic and a bistable resistance ratio of about two orders by I-V sweeping. In order to increase the oxygen ion quantity in the gallium oxide layer, the proposed sample was sputtered in a mixed ambient of Ar and oxygen, and the resistance ratio was enhanced by 2.5 orders. In addition to the resistance ratio, set voltage distribution statistics show that the stability of gallium oxide sputtered in mixed Ar and oxygen gas was better than standard Ar-only sample.
Influence of Oxygen Concentration on Self-Compliance RRAM in Indium Oxide Film
(2014-09-01)
Yang, Jyun-Bao
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Chang, Ting-Chang
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Huang, Jheng-Jie
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Chen, Yu-Ting
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Tseng, Hsueh-Chih
This letter investigates various oxygen concentrations in indium oxide films which induce different resistance switching behaviors, including two self-compliance behaviors and a two-step set process. The accumulated oxygen ions produce an oxygen-rich indium oxide film, which can be considered as a variable series resistor after the forming process. Analyses indicate that the lower self-compliance current can be attributed to this larger variable series resistor from the additional oxygen ions. The more significant oxidation reaction decreases the current of the high resistance state. Hence, power consumption can be reduced effectively.
Insertion of a Si layer to reduce operation current for resistive random access memory applications
(2013-06-24)
Chen, Yu-Ting
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Chang, Ting-Chang
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Peng, Han-Kuang
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Tseng, Hsueh-Chih
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Huang, Jheng-Jie
In this study, a reduction of low resistive state (LRS) current is discovered in a V:SiO2/Si bi-layer structure with the addition of a Si layer. A Pt/V:SiO2/TiN structure is fabricated as the standard sample. The results of conduction mechanism analyses for LRS indicate that a SiO2 interfacial layer forms through oxidation of the inserted Si layer after the set process. The LRS current reduction can be attributed to the formation of this SiO2 layer. In addition, self-compliance behavior for the bi-layer structure during the set process further proves the existence of this SiO2 buffer layer in LRS. (C) 2013 AIP Publishing LLC.
Investigating bipolar resistive switching characteristics in filament type and interface type BON-based resistive switching memory
(2013-02-01)
Tseng, Hsueh-Chih
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Chang, Ting-Chang
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Cheng, Kai-Hung
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Huang, Jheng-Jie
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Chen, Yu-Ting
This paper studies the effect of doping on BON-based resistive switching characteristics. Typical bipolar resistive switching behavior can be observed in Pt/BON/TiN and Pt/BON:Gd/TiN devices. The conductive path(s) of the Pt/BON/TiN is vacancy-dominated while the Pt/BON:Gd/TiN is metal-dominated. Additionally, there is an atypical bipolar resistive switching in the Gd-doping device. This atypical characteristic has not only a size effect, but also a lower operating current. The resistance transitions are due to the variation in conductance of the switching layer, which is clearly influenced by the different area size. A mechanism is proposed to explain this atypical characteristic. (c) 2012 Elsevier B.V. All rights reserved.
Investigating the improvement of resistive switching trends after post-forming negative bias stress treatment
(2011-09-26)
Tseng, Hsueh-Chih
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Chang, Ting-Chang
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Huang, Jheng-Jie
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Yang, Po-Chun
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Chen, Yu-Ting
This paper investigates the improvement of resistive switching trends after post-forming negative bias stress treatment of a Pt/Yb(2)O(3)/TiN device that has undergone positive bias forming process for activation. After the treatment, characteristics of the conductive filament, such as the temperature dependence of resistivity and transition mechanism, undergo changes. Furthermore, this treatment causes the conductive filament to transform from being primarily composed of vacancies to being metallic Yb dominant, which not only reduces operation voltages such as V(set) and V(reset) but also improves the on/off ratio. In reliability tests, the device has stable retention. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3645004]
Low power consumption resistance random access memory with Pt/InOx/TiN structure
(2013-09-02)
Yang, Jyun-Bao
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Chang, Ting-Chang
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Huang, Jheng-Jie
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Chen, Yu-Ting
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Tseng, Hsueh-Chih
In this study, the resistance switching characteristics of a resistive random access memory device with Pt/InOx/TiN structure is investigated. Unstable bipolar switching behavior is observed during the initial switching cycle, which then stabilizes after several switching cycles. Analyses indicate that the current conduction mechanism in the resistance state is dominated by Ohmic conduction. The decrease in electrical conductance can be attributed to the reduction of the cross-sectional area of the conduction path. Furthermore, the device exhibits low operation voltage and power consumption. (C) 2013 AIP Publishing LLC.
Resistive switching characteristics of gallium oxide for nonvolatile memory application
(2013-02-01)
Yang, Jyun-Bao
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Chang, Ting-Chang
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Huang, Jheng-Jie
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Chen, Shih-Ching
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Yang, Po-Chun
This study investigates bipolar resistance switching memory in a fabricated Pt/GaOx/TiN device. Gallium oxide sputtered in ambient Ar shows a change in resistance ratio of two orders of magnitude. The enhancement of resistance ratio is also observed in the gallium oxide layer when deposited in ambient Ar/O-2. The X-ray photoelectron spectroscopy analysis shows that this gallium oxide in ambient Ar/O-2 can reduce the number of defects and enhance the stability of switching behavior. An analysis of current transport mechanism in the high resistance state indicates that the larger effective thickness can be attributed to the higher oxygen concentration, and can increase the resistance value of the high resistance state. (C) 2012 Elsevier B.V. All rights reserved.
Resistive switching characteristics of ytterbium oxide thin film for nonvolatile memory application
(2011-12-30)
Tseng, Hsueh-Chih
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Chang, Ting-Chang
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Huang, Jheng-Jie
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Chen, Yu-Ting
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Yang, Po-Chun
This paper studies the effects of both the positive and negative forming processes on the resistive switching characteristics of a Pt/Yb(2)O(3)/TiN RRAM device. The polarity of the forming process can determine the transition mechanism, either bipolar or unipolar. Bipolar behavior exists after the positive forming process, while unipolar behavior exists after the negative forming process. Furthermore, the bipolar switching characteristics of the Pt/Yb(2)O(3)/TiN device can be affected by using a reverse polarity forming treatment, which not only reduces the set and reset voltage, but also improves the on/off ratio. Crown Copyright (C) 2011 Published by Elsevier B. V. All rights reserved.