Browsing by Author "Huang, Jian-Hao"

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Solution-Processed Vertical Organic Transistors Fabricated by Nanoimprint Lithography
(2013-02-01)
Wu, Yang-Kai
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Huang, Jian-Hao
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Tsai, Wu-Wei
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Chen, Yung-Pin
;
Lin, Shih-Chieh
In this letter, we demonstrate the first vertical-channel organic transistor using nanoimprint technology to produce a base electrode with high-density nanometer pores to well control the channel current vertically flowing through the pores. The aspect ratios of nanopores, which determine the switching performance of the vertical transistor, are greatly enhanced by transferring the nanostructure to the underlying layers. Without pore accumulation, a low leakage current can be achieved. The vertical transistor delivers an ON current of 0.35 mA/cm(2) and an ON/OFF current ratio of around 3000 at 1.8 V. The results prove the feasibility to produce low-voltage organic transistors over a large area with potentially low production cost.
Structural and electrical properties analysis of InAlGaN/GaN heterostructures grown at elevated temperatures by MOCVD
(2018-11-01)
Lumbantoruan, Franky
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Zheng, Xia-Xi
;
Huang, Jian-Hao
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Huang, Ren-Yao
;
Mangasa, Firman
We report the effects of the growth temperature on the structural and electrical properties of the InAlGaN/GaN heterostructures grown on c-plane sapphire substrates. X-ray Photoelectron Spectroscopy and Atomic Force Microscopy measurements results indicate that the InAlGaN layer properties is strongly dependent on the growth temperature. It is observed that the Gallium incorporation increases with the increase of the growth temperature. Meanwhile, the surface roughness decreases from 0.49 nm to 0.34 nm with the increase of growth temperature. The variation of structural properties, composition and surface morphology influences the transport properties of the InAlGaN/GaN heterostructures. High 2DEG electron density, low sheet resistance and good C-V response with a steep slope for InAlGaN/GaN HEMT were achieved at an optimized growth temperature window between 900 degrees C and 950 degrees C.