Browsing by Author "Huang, Jian-Ming"

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Impacts of a polycrystalline-silicon buffer layer on the performance and reliability of strained n-channel metal-oxide-semiconductor field-effect transistors with SiN capping
(2007-03-19)
Lu, Ching-Sen
;
Lin, Horng-Chih
;
Huang, Jian-Ming
;
Lee, Yao-Jen
;
電子工程學系及電子研究所
Characteristics of n-channel metal-oxide-semiconductor field-effect transistors with SiN capping were investigated in this work. Although the SiN capping could dramatically enhance the carrier mobility and thus the device drive current, the resistance to hot-carrier degradation is compromised as well, owing to the large amount of hydrogen contained in the SiN layer which may diffuse into the channel region during the process. To eliminate this shortcoming, the insertion of an ultrathin (10 nm) polycrystalline-silicon buffer layer between the gate and the SiN capping was proposed and demonstrated to restore the hot-carrier reliability of the devices without compromising the current enhancement due to the SiN capping. (c) 2007 American Institute of Physics.
Impacts of low-pressure chemical vapor deposition-SiN capping layer and lateral distribution of interface traps on hot-carrier stress of n-channel metal-oxide-semiconductor field-effect-transistors
(2007-04-01)
Lu, Ching-Sen
;
Lin, Horng-Chih
;
Huang, Jian-Ming
;
Lu, Chia-Yu
;
Lee, Yao-Jen
The characteristics of n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) with a SiN capping layer were investigated in this study. Although the incorporation of the SiN capping layer markedly enhanced the carrier mobility and thus the drive current of the fabricated devices, the resistance to hot-carrier degradation was sacrificed, owing to the high content of hydrogen in the SiN layer that might diffuse to the channel region during the process. Even if the SiN layer was removed and the channel strain was released later, the hot-carrier degradation was severer than that in devices without SiN capping. Finally, the lateral distribution of generated interface states due to hot-carrier stress was also investigated in this study.