Browsing by Author "Huang, Jiun-Jie"

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A Layout-Aware Test Methodology for Silicon Interposer in 3D System-in-a-Package
(2013)
Gu, Ruei-Ting
;
Ho, Cheng-You
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Li, Katherine Shu-Min
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Ho, Yingchieh
;
Chen, Liang-Bi
In this paper, we propose an efficient silicon interposer pre-test methodology, which is based on the layout-aware ripple baseline algorithm for System-in-a-Package (SiP). The proposed methodology uses FPGA as our test vehicle that can test all interconnects at once without any test probes. The test interposer is synthesized according to the given layout of the target interposers, which provide microbumps and solder balls with pitches, and the test interposers are connected to the upper test side of the target interposers. Thus the test loops, which cover all interconnections of the target interposers, are built by connecting the test interposers and the target interposers. The bottom side of the target interposer is connected to an FPGA as the tester that provides test patterns to the target interposer and compares the result to identify the faulty interconnections of the target interposer. Experimental results show our method is both effective and efficient with achieving 100% fault coverage for all interposers. With scaling to more than hundreds of hundreds interposers, our method is still effective within two to three hours.
Investigation of the effect of different oxygen partial pressure to LaAlO3 thin film properties and resistive switching characteristics
(2011-12-01)
Liu, Kou-Chen
;
Tzeng, Wen-Hsien
;
Chang, Kow-Ming
;
Huang, Jiun-Jie
;
Lee, Yun-Ju
The pulsed laser deposition and growth of a high-k dielectric lanthanum aluminate LaAlO3 (LAO) thin film on indium tin oxide/glass substrate at different oxygen partial pressure was studied. Based on the pulsed laser deposition growth mechanism, we explain how a difference in the oxygen partial pressure influences the surface roughness, formation of an interfacial layer, and the transparent resistive switching characteristics of LAO thin films. The micro-structure and oxygen concentration difference inside LAO thin films may be the main reason for the difference in electrical and resistive switching properties. Films grown at higher oxygen partial pressure displayed more reliable resistive switching performance, due to the formation of the interfacial layer and a lower concentration of oxygen vacancies. The interfacial layer serves as a good oxygen reservoir and the involvement of more oxygen ions ensures the switching reliability. The migration of oxygen ions between the interfacial layer and the LAO film under applied bias may be the switching mechanism. (C) 2011 Elsevier B. V. All rights reserved.