Browsing by Author "Huang, Jun-Fu"

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Effect of Moisture on Electrical and Reliability Characteristics for Dense and Porous Low-k Dielectrics
(2013-01-01)
Cheng, Yi-Lung
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Huang, Jun-Fu
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Chang, Wei-Yuan
;
Chang, Yu-Min
;
Leu, Jihperng
The effect of absorbed moisture on the electrical and reliability characteristics of the low-k dielectrics was investigated in this study. The experimental results indicate that the porous low-k dielectrics would absorb more moisture as compared to the dense low-k dielectrics. This absorbed moisture degrades the electrical and reliability performance of the low-k dielectrics. A higher temperature anneals at 400 degrees C is needed to decompose physicallyadsorbed water, which is benefit to restore reliability performance. On the other hand, the chemically-adsorbed moisture seems to be difficult to be removed by a 400 degrees C annealing, causing a degraded TDDB performance.
Effect of moisture on electrical properties and reliability of low dielectric constant materials
(2014-02-01)
Cheng, Yi-Lung
;
Leon, Ka-Wai
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Huang, Jun-Fu
;
Chang, Wei-Yuan
;
Chang, Yu-Min
The effect of absorbed moisture on the electrical characteristics and reliability of low dielectric constant materials (low-k) was investigated in this study. The experimental results reveal that porous low-k dielectrics absorb more moisture than dense low-k dielectrics. This absorbed moisture degrades the electrical performance and reliability of both classes of low-k dielectrics. Annealing at a higher temperature of 400 degrees C is required to decompose the physically-adsorbed moisture and thereby restore reliability performance. However, the chemically-adsorbed moisture seems to be difficult to remove by annealing at 400 degrees C, causing a degraded TDDB performance. Crown Copyright (C) 2013 Published by Elsevier B.V. All rights reserved.
Effect of NH3/N-2 ratio in plasma treatment on porous low dielectric constant SiCOH materials
(2014-05-01)
Huang, Jun-Fu
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Bo, Tain-Cih
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Chang, Wei-Yuan
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Chang, Yu-Min
;
Leu, Jihperng
This study investigates the effect of the NH3/N-2 ratio in plasma treatment on the physical and electrical properties as well as the reliability characteristics of porous low-k films. All of the plasma treatments resulted in the formation of a thin and modified layer on the surface of porous low-k films, and the properties of this modified layer were influenced by the NH3/N-2 ratio in the plasma. Experimental results indicated that pure N-2 gas plasma treatment formed an amide-like/nitride-like layer on the surface, which apparently leads to a higher increase in the dielectric constant. Plasma treatment with a mixture of NH3/N-2 gas induced more moisture uptake on the surface of the low-k dielectric, degrading the electrical performance and reliability. Among all plasma treatment with NH3/N-2 mixed gas, that with pure NH3 gas yielded low-k dielectrics with the worse electrical and reliability characteristics. (C) 2014 American Vacuum Society.
Effect of thermal treatment on physical, electrical properties and reliability of porogen-containing and porogen-free ultralow-k dielectrics
(2013-01-15)
Chang, Yu-Min
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Chang, Wei-Yuan
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Huang, Jun-Fu
;
Leu, Jihperng
;
Cheng, Yi-Lung
The effects of thermal annealing on the physical, electrical properties and reliability of porogen-containing and porogen-free ultralow-k dielectrics prepared by plasma-enhanced chemical vapor deposition (PECVD) are investigated. The porogen-free low-k dielectrics are obtained by using UV curing process to removal organic sacrificial phase and to generate open porosity. The results are compared with PECVD porogen-containing low-k films fabricated without UV curing process and PECVD low-k dielectrics deposited without organic sacrificial phase. The experimental results show that all low-k films remained stable after they were experimentally heating to temperatures up to 700 degrees C. The non-porous low-k films also showed the highest reliability. Although the porous-free low-k film requires an additional UV curing process, the heat stress confirmed that its thermal stability was better than that of the porogen-containing low-k film. At an annealing temperature above 500 degrees C, the heating process is comparable to UV curing, but does not provide Si-O-Si cross-linking within the film. At an annealing of 600 degrees C, the porogen-free low-k films have a relatively higher breakdown electric-field and longer failure time in comparison to the porogen-containing low-k films. However, pores generated in porogen-containing low-k films at high temperature cause reliability to degrade with annealing temperature. Crown Copyright (c) 2012 Published by Elsevier B.V. All rights reserved.
Impact of plasma treatment on structure and electrical properties of porous low dielectric constant SiCOH material
(2013-10-01)
Cheng, Yi-Lung
;
Huang, Jun-Fu
;
Chang, Yu-Min
;
Leu, Jihperng
;
材料科學與工程學系
Low dielectric constant (low-k) porous films are needed for advanced technologies to improve signal propagation. The integration of porous low-k films faces more severe challenges due to the presence of porosity. Plasma treatments have been considered to be critical steps to impact the low-k films' properties. In this study, the effect of various H-2/He plasma treatments on the porous low-k dielectrics deposited by plasma enhanced chemical vapor deposition was investigated. All the plasma treatments resulted in the formation of a thin and dense layer on the surface of the porous low-k films. Additionally, the properties of this top dense layer are modified and changed for the standard H-2/He plasma treatment, leading to a degraded electrical and reliability performance. However, H-2/He plasma-treated low-k dielectric by the remote plasma method shows a better electrical and reliability performance. As a result, the remote plasma treatment on the porous low-k dielectrics appears to be a promising method in the future interlayer dielectrics application. (C) 2012 Elsevier B.V. All rights reserved.