Browsing by Author "Huang, Jung-Jie"

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Effect of Nickel Concentration on Bias Reliability and Thermal Stability of Thin-Film Transistors Fabricated by Ni-Metal-Induced Crystallization
(2012-01-01)
Lai, Ming-Hui
;
Wu, YewChung Sermon
;
Huang, Jung-Jie
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Ni-metal-induced crystallization (MIC) of amorphous Si (alpha-Si) has been employed to fabricate low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). Although the high leakage current is a major issue in the performance of conventional MIC-TFTs since Ni contamination induces deep-level state traps, it can be greatly improved by using well-known technologies to reduce Ni contamination. However, for active-matrix organic light-emitting diode (AMOLED) display applications, the bias reliability and thermal stability are major concerns especially when devices are operated under a hot carrier condition and in a high-temperature environment. It will be interesting to determine how the bias reliability and thermal stability are affected by the reduction of Ni concentration. In the study, the effect of Ni concentration on bias reliability and thermal stability was investigated. We found that a device exhibited high immunity against hot-carrier stress and elevated temperatures. These findings demonstrated that reducing the Ni concentration in MIC films was also beneficial for bias reliability and thermal stability. (C) 2012 The Japan Society of Applied Physics
Effect of Nickel Concentration on Bias Reliability and Thermal Stability of Thin-Film Transistors Fabricated by Ni-Metal-Induced Crystallization
(2012-01-01)
Lai, Ming-Hui
;
Wu, YewChung Sermon
;
Huang, Jung-Jie
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Ni-metal-induced crystallization (MIC) of amorphous Si (alpha-Si) has been employed to fabricate low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). Although the high leakage current is a major issue in the performance of conventional MIC-TFTs since Ni contamination induces deep-level state traps, it can be greatly improved by using well-known technologies to reduce Ni contamination. However, for active-matrix organic light-emitting diode (AMOLED) display applications, the bias reliability and thermal stability are major concerns especially when devices are operated under a hot carrier condition and in a high-temperature environment. It will be interesting to determine how the bias reliability and thermal stability are affected by the reduction of Ni concentration. In the study, the effect of Ni concentration on bias reliability and thermal stability was investigated. We found that a device exhibited high immunity against hot-carrier stress and elevated temperatures. These findings demonstrated that reducing the Ni concentration in MIC films was also beneficial for bias reliability and thermal stability. (C) 2012 The Japan Society of Applied Physics
Effect of nickel concentration on source/drain series resistance and channel resistance of Ni-metal-induced crystallization thin-film transistors
(2013-10-01)
Lai, Ming-Hui
;
Wu, YewChung Sermon
;
Huang, Jung-Jie
;
材料科學與工程學系
;
Department of Materials Science and Engineering
The Ni-metal-induced crystallization (MIC) of amorphous Si (a-Si) has been employed to fabricate low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). Most studies have focused only on reducing Ni contamination because Ni residues cause high leakage current in MIC-TFTs. Also of concern is the source/drain (S/D) series resistance, which degrades the device performance (driving ability) that might vary with the Ni concentration in MIC-TFTs. Improving the driving ability of MIC-TFTs requires a detailed understanding of how Ni residues affect S/D series resistance. This study investigates how Ni concentration affects S/D series resistance by using the transmission line method. The results of this study provide further insight into how Ni concentration and resistance are related. The results show that the S/D series resistance and channel resistance decreased with a reduction in Ni concentration in MIC poly-Si because of better crystalline quality and lower degradation of the donor concentration. This phenomenon was caused by the Ni concentration forming less NiSi2 nucleation sites to generate a large grain size; Ni atoms serve as acceptor-like dopants in silicon, which counteract with the effects of n-type doping, subsequently reducing the donor concentration in the S/D region. (C) 2013 Elsevier B. V. All rights reserved.
Self-Heating Effect on Bias-Stressed Reliability for Low-Temperature a-Si:H TFT on Flexible Substrate
(2010-03-01)
Kao, Shih-Chin
;
Zan, Hsiao-Wen
;
Huang, Jung-Jie
;
Kung, Bo-Cheng
;
光電工程學系
Hydrogenated amorphous silicon thin-film transistors on colorless polyimide substrates were successfully fabricated at a low process temperature (160 degrees C). The gate leakage current is as low as 10(-13) A, while the field-effect mobility is 0.42 cm(2)V(-1) . s(-1), and the subthreshold swing is 0.77 V/dec. Using bias-temperature stress on devices with different channel widths, the enhancement of self-heating effect on bias-stressed reliability is investigated for the first time. Elevated temperature due to self-heating effect is estimated either by extending the bias-stressed model or by modifying the thermal equivalent circuit model. Degradation of device reliability on a bent substrate is also significant when self-heating effect is incorporated.