Browsing by Author "Huang, Jyun-Yang"

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Poly-Si Nanowire Nonvolatile Memory With Nanocrystal Indium-Gallium-Zinc-Oxide Charge-Trapping Layer
(2010-12-01)
Chen, Lun-Chun
;
Wu, Yung-Chun
;
Lin, Tien-Chun
;
Huang, Jyun-Yang
;
Hung, Min-Feng
This letter introduces a polycrystalline silicon (poly-Si) thin-film nonvolatile memory (NVM) with a nanocrystal (NC) indium-gallium-zinc-oxide (IGZO) charge-trapping layer. Experimental results indicate that this NVM exhibits high and symmetric program/erase speeds through the Fowler-Nordheim tunneling mechanism. The memory window loss of the NVM with NC IGZO charge-trapping layer is 25% after 10(4) s at 85 degrees C due to deep quantum well, as well as high-density and deep trap sites in NC IGZO charge-trapping layer. Accordingly, a poly-Si thin-film transistor with NC IGZO charge-trapping layer is promising for NVM applications.