Browsing by Author "Huang, KH"

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A CMOS focal-plane rotation sensor with retinal processing circuit
(2003)
Huang, KH
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Lin, LJ
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Wu, CY
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
In this paper, a CMOS focal-plane rotation sensor with the retinal processing circuit is proposed and implemented. The proposed rotation sensor has a polar structure and is selective to the angular velocity and direction (clockwise and counterclockwise) of the rotating images. The selected angular velocity depends on the frequency of an external clock signal, which can be precisely adjusted. In the proposed rotation sensor, there are 104 pixels, which form five concentric circles. The area of a single pixel is 91x84 mum(2) with a fill factor of 20% whereas the chip area is 1812x1825 mum(2). It is found from the experimental results that the detectable angular velocity and illumination range of this rotation sensor are from 2x10(-2) pi/sec to 206 pi/sec as well as from 0.91 lux to 366 lux under a contrast of 80%, respectively.
A new light-activated CMOS retinal-pulse generation circuit without external power supply for artificial retinal prostheses
(2001)
Wu, CY
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Lin, LJ
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Huang, KH
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電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A new approach to implement the artificial retinal prosthesis using the silicon retina chip is proposed in this paper. In the proposed new approach, a new light-activated CMOS retinal pulse generation circuit is designed by using the gate-controlled lateral npn and pnp bipolar junction transistors (BJTs) to form the new BJT-based silicon retina structure. With the BJT served as a photovoltaic device, which generates power under incident light, the designed circuit does not require external power supply. Moreover, the proposed new circuit can function as photoreceptors, horizontal cells, and bipolar cells of the real vertebrate retina to generate retinal pulses under moving object or flash light image. Both static and dynamic functions of the proposed circuit have been verified by using HSPICE simulation. An experimental chip with 32x32 silicon retina cell array is designed by using 0.25mum one-poly-five-metal CMOS technology with deep n-wells. The chip will be implanted to eyes in animal tests.
A new pseudo-bipolar-junction-transistor (PBJT) and its application in the design of retinal smoothing network
(2002)
Wu, CY
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Huang, HC
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Lin, LJ
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Huang, KH
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電機學院
A new MOSFET circuit structure called the pseudo-BJT (PBJT) is proposed and analyzed in this work. This new structure mimics the function of the BJT, and it has advantages of smaller area and better process compatibility over the real BJT. The function of PBJT is verified to be similar to the real BJT via HSPICE simulation. Moreover, applications of the retinal smoothing network and the edge-extracting circuit using the PBJT structure are also demonstrated. The PBJT plays the role of the real BJT in both applications, and they are verified to be functionally correct via HSPICE simulations.
A new structure of large-neighborhood cellular nonlinear network (LN-CNN)
(2003-01-01)
Cheng, CH
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Chen, SH
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Lin, LJ
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Huang, KH
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Wu, CY
In this paper, a novel Large-Neighborhood Cellular Nonlinear Network (LN-CNN) structure is proposed and analyzed. The proposed LN-CNN structure can realize both A and B templates with more than two neighborhood layers without complex direct connections between neural cell and neighboring cells. In both A and B templates, the first layer is defined by 4 neighboring cells located at the 4 corners of a diamond shape whereas the second layer is defined by 8 cells. In realizing the 12 template coefficients of a template, only 8 connections are required as compared to 12 connections in the conventional CNN structure. Thus the required chip area for synaptic connection can be reduced. Using the proposed LN-CNN structure, the LN-CNN functions, such as noise removing, Muller-Layer arrowhead illusion, and connected component detection, have been successfully realized and verified in MATLAB simulations. The constraints on the realized templates and the template coefficients in the third or higher layers are analyzed and discussed. Based upon he above successful simulation results, the application of the proposed LN-CNN structure to the design of LN-CNN Universal Machine (LN-CNNUM) is quite feasible. The related research will be conducted in the future.
A new two-layer quantum-dot large-neighborhood cellular nonlinear network (QLN-CNN) using quantum-dot cellular automata
(2002)
Tsai, TC
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Sun, M
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Lin, LJ
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Huang, KH
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Cheng, CH
A novel structure of QLN-CNN is proposed. The new structure of the QLN-CNN contains two layers of QCA array and introduces concepts of the A cloning templates, the B cloning templates, and the thresholds. The gene-decoding concept of CNNs is also used in this structure. Thus it operates more like real CNNs. In this paper, three CNN operations are proven to be achieved by this new structure through MATLAB simulations.
A reverse logistics cost minimization model for the treatment of hazardous wastes
(2002-11-01)
Hu, TL
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Sheu, JB
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Huang, KH
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運輸與物流管理系註：原交通所+運管所
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Department of Transportation and Logistics Management
This study presents a cost-minimization model for a multi-time-step, multi-type hazardous-waste reverse logistics system. A discrete-time linear analytical model is formulated that minimizes total reverse logistics operating costs subject to constraints that take into account such internal and external factors as business operating strategies and governmental regulations. Application cases are presented to demonstrate the feasibility of the proposed approach. By using the proposed model coupled with operational strategies, it is shown that the total reverse logistics costs for the applications cases can be reduced by more than 49%. (C) 2002 Elsevier Science Ltd. All rights reserved.
Analysis and design of a CMOS angular velocity- and direction-selective rotation sensor with a retinal processing circuit
(2004-12-01)
Huang, KH
;
Lin, LJ
;
Wu, CY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
This paper implements and analyzes a CMOS angular velocity- and direction-selective rotation sensor with a retinal processing circuit. The proposed rotation sensor has a polar structure and is selective of the angular velocity and direction (clockwise and counterclockwise) of the rotation of images. The correlation-based algorithm is adopted and each pixel in the rotation sensor is correlated with the pixel that is 45degrees apart. The angular velocity selectivity is enhanced by placing more than one pixel between two correlated pixels. The angular velocity selectivity is related to both the number and the positions of the edges in an image. Detailed analysis characterizes angular velocity selectivity for different edges. An experimental chip consisting 104 pixels, which form five concentric circles, is fabricated. The single pixel has an area of 91 X 84 mum(2) and a fill factor of 20 %, whereas the area of the chip is 1812 x 1825 mum(2). The experimental results concerning the fabricated chip successfully verified the analyzed characteristics of angular velocity and direction selectivity. They showed that the detectable angular velocity and range of illumination of this rotation sensor are from 2.5 x 10(-3) pi /s to 40 pi/s and from 0.91 lux to 366 lux, respectively.
Coverage-dependent thermal reactions of digermane on Si(100)-(2x1)
(1996-12-15)
Lin, DS
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Huang, KH
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Pi, TW
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Wu, RT
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物理研究所
In this study, we examine the adsorption and thermal reactions of digermane (Ge6H6) on the Si(100)-(2X1) surface with high-resolution core-level photoemission spectroscopy using synchrotron radiation. At 325 K, the digermane dissociatively chemisorbed to produce GeH3, GeH2, GeH, and SiH species. The sticking coefficient at zero coverage deduced from the photoemission intensity is similar to 0.5. Successive annealing of rhc digermane-saturated surface tc, higher temperatures causes further decomposition of GeH3 and GeH2 and the desorption H from GeH and SiH, leaving atomic Ge on the surface. In light of the sufficiently large chemical and surface shifts in their core-level binding energies fur different surface species, those processes were identified by examining the evolution of Ge 3d and Si 2p line shapes. Experimental results indicate that the reaction for H release from GeH not only occurred in a large temperature range but also depended heavily on the Ge2H6 adsorption coverages. To reaction routes for H release from Ge sites were used to describe the large reaction temperature spreads accurately. GeH decomposition by transferring the H atom to a surface Si dangling bond took place for low coverages at less than or equal to 590K, and H-2 thermal desorption occurred for higher coverages in the range of 590-770 K. The former process of atom transfer of H from Ge to Si sites was directiy observed in the Ge 3d and Si 2p photoemission spectra.
Growth process of Ge on Si(100)-(2x1) in atomic-layer epitaxy from Ge2H6
(1997-08-15)
Huang, KH
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Ku, TS
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Lin, DS
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物理研究所
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Institute of Physics
This study investigates the growth process of Ge on Si(100) during atomic-layer epitaxy (ALE) utilizing digermane. The surface ordering, morphology, and stoichiometry of the digermane saturated Si(100) surface at temperatures between 300 and 900 K, as well as the grown films are examined both by scanning tunneling microscopy (STM) and high-resolution core-level photoemission spectroscopy employing synchrotron radiation. An exposure of more than 15 L (1 L=10(-6) T s) of digermane on the Si(100)-(2x1) surface at room-temperature results in a saturated and disordered surface. When the digermane saturated surface is heated to 725 K for 60 s, diluted Ge dimer chains are created and surrounded by SiH species. Further annealing to 810 K completely desorbs hydrogen from the surface, leaving large two-dimensional islands covering similar to 41% of its area. The surface recovers its smooth 2x1 structure, but is interspersed with poorly ordered short dimer vacancy lines at 900 K with no observable contrast on the atomic terraces, indicating displacive adsorption of Ge on the terraces. Significant differences of the surface diffusion phenomena between the gas-phase and solid-phase molecular-beam epitaxy (MBE) are observed. Multilayer Si deposition is performed by ALE, i.e., cyclic digermane adsorption at near room temperature, followed by thermal annealing at 900 K. STM images reveal the formation of 2 x n structures and increasing roughening of the surface as the growth cycle increases, similar to what occurs during MBE. Issues related to the atomic origins of surface core-level shifts and the chemical composition of the surface layer resulting from the formation of mixed Ge-Si or Ge-Ge during the submonolayer adsorption of Ge on Si(100) are also discussed.
In the blink of a silicon eye
(2001-05-01)
Cheng, CH
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Wu, CY
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Sheu, B
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Lin, LJ
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Huang, KH