Browsing by Author "Huang, KP"

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Electron field emission from fluorinated amorphous carbon nanoparticles on porous alumina
(2003-12-15)
Lai, SH
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Huang, KP
;
Pan, YM
;
Chen, YL
;
Chan, LH
The fluorinated amorphous carbon nanoparticles (a-C:F NPs) films have been prepared on a porous alumina at a lower temperature of similar to100 degreesC by an ECR-CVD system with a mixture of CF4, C2H2 and Ar as precursors. The morphology of a-C:F NPs films was verified by FESEM. The microstructure and chemical bonding nature of the a-C:F NPs films were investigated by Raman spectroscopy and XPS, respectively. The fluorinated samples need a lower field (similar to2.25 V/mum for 10.6% F a-C:F NPs films) to emit the electron than unfluorinated ones. The excellent field-emission properties of a-C:F NPs films are due to the effect of the shape, fluorine doping and dangling bonds. (C) 2003 Elsevier B.V. All rights reserved.
Structure and electrical studies of fluorinated amorphous carbon films prepared by electron cyclotron resonance/chemical-vapor deposition
(2003-06-01)
Huang, KP
;
Lin, P
;
Shih, HC
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Fluorinated amorphous carbon (a-C:F) films of high fluorine content were prepared by radio-frequency (RF) bias assisted electron cyclotron resonance/chemical-vapor deposition (ECR-CVD) with a variable fluorine-to-carbon (F/C) ratio of the feed gases. The films were characterized by X-ray photoelectron spectroscopy (XPS), electron energy loss spectroscopy (EELS) and transmission electron microscopy (TEM). A low dielectric constant of around 1.5 and high dielectric strength beyond 35 MV/cm were obtained under the as-deposited and annealed conditions, respectively. The measured huge current surge and electrical conductivity of the films were discussed on the basis of the nanovoids and sp(2)/Sp(3) bonding fractions as derived from the above characterizations. [DOI: 10.1143/JJAP.42.3598].
Structures and properties of fluorinated amorphous carbon films
(2004-07-01)
Huang, KP
;
Lin, P
;
Shih, HC
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Fluorinated amorphous carbon (a-C:F) films were deposited by radio frequency bias assisted microwave plasma electron cyclotron resonance chemical vapor deposition with tetrafluoromethane (CF4) and acetylene (C2H2) as precursors. The deposition process was performed at two flow ratios R=0.90 and R=0.97, where R=CF4/(CF4+C2H2). The samples were annealed at 300 degreesC for 30 min. in a N-2 atmosphere. Both Fourier transform infrared and electron spectroscopy for chemical analyzer were used to characterize the a-C:F film chemical bond and fluorine concentration, respectively. A high resolution electron energy loss spectrometer was applied to detect the electronic structure. The higher CF4 flow ratio (R=0.97) produced more sp(3) linear structure, and it made the a-C:F film smoother and softer. A lifetime of around 0.34 mus and an energy gap of similar to2.75 eV were observed in both the as-deposited and after annealing conditions. The short carriers lifetime in the a-C:F film made the photoluminescence peak blueshift. The annealing changed both the structure and composition of the a-C:F film. The type of fluorocarbon bond and electronic structure characterized the mechanical and physical properties of a-C:F film. (C) 2004 American Institute of Physics.