Browsing by Author "Huang, Kun-Ping"

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Characteristics of Cu2ZnSn(SXSe1-x)(4) thin-film solar cells prepared by sputtering deposition using single quaternary Cu2ZnSnS4 target followed by selenization/sulfurization treatment
(2017-04)
Lin, Yu-Pin
;
Hsieh, Tsung-Eong
;
Chen, Yen-Chih
;
Huang, Kun-Ping
;
材料科學與工程學系
This work demonstrates the preparation of Cu2ZnSn(SxSe1-x)(4)(CZTSSe) thin films by sputtering deposition using single-phase Cu2ZnSnS4 (CZTS) target followed by selenization/sulfurization treatment at 570 degrees C for 1 h. Afterward, the CZTSSe thin-film solar cell samples with the Mo/CZTSSe/CdS/i-ZnO/IZO/Al structure were prepared and their performances were evaluated. By varying the ratio of Se and S powders of heat treatment, the Cu-poor/Zn-rich CZTSSe layers with S/(S+Se) ratio in the range of 0.21-1 were achieved and the CZTSSe layers were the mixture of kesterite CZTS and CZTSe phases as revealed by the x-ray diffraction and the Raman spectroscopy analyses. UV-NIR spectroscopy indicated the bandgaps of CZTSSe samples are in the range of 1.06-1.45 eV when the S/(S+Se) ratio varies from 0.21 to 1. Hall measurement observed the best transport property with p-type carrier concentration of 2.17x10(15) cm(-3) and mobility of 8.9 cm(2) V-1 sec(-1) in CZTSSe layer with S/(S+Se) ratio of 0.46. Under the AM1.5 illumination condition, the CZTSSe thin-film solar cell sample with S/(S+Se) ratio of 0.46 exhibited the best performance with open-circuit voltage of 0.506 V, short-circuit current density of 27.41 mA/cm(2), fill factor of 50% and conversion efficiency of 6.9%.
Formation of gradient Ga distribution in Cu(In,Ga)Se-2 thin-film solar cells prepared by (InGa)(2)Se-3/CuInGaSe2 stacking structure followed by Se-Vapor selenization
(2018-09-15)
Lin, Yu-Pin
;
Hsieh, Tsung-Eong
;
Chen, Yen-Chih
;
Huang, Kun-Ping
;
材料科學與工程學系
Cu(In,Ga)Se-2 (CIGS) light absorption layers with gradient Ga distribution were prepared by utilizing the sequential deposition of (InGa)(2)Se-3 (IGS) and CIGS layers. The IGS buffer layers were deposited on Mo/soda lime glass substrate at various working pressures (WP = 1, 10 and 30 mtorr) followed by the deposition of CIGS layers. Afterward, the microstructures and compositions of CIGS layers formed by the selenization of CIGS/IGS stacking layers in Se vapor ambient at 560 degrees C for 1 h were investigated. The CIGS layer with the optimized microstructure and transport properties was then implanted in the thin-film solar cells and the device with the best conversion efficiency of 8.22 +/- 0.0754% was achieved. The satisfactory solar cell performance was ascribed to the insertion of IGS layer which remedies the deficiency of In, Ga and Se elements and forms the gradient Ga distribution in CIGS layer as revealed by the secondary ion mass spectroscopy.
High Performance Poly Si Junctionless Transistors with Sub-5nm Conformally Doped Layers by Molecular Monolayer Doping and Microwave Incorporating CO2 Laser Annealing for 3D Stacked ICs Applications
(2015)
Lee, Yao-Jen
;
Cho, Ta-Chun
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Sung, Po-Jung
;
Kao, Kuo-Hsing
;
Hsueh, Fu-Kuo
A junctionless (JL) fin thin film transistor (FinTFT) with a novel shell doping profile (SDP) formed by a damage-free conformal molecular monolayer doping (MLD) method and a combination of microwave annealing (MWA) and CO2 laser spike annealing (COLSA) is demonstrated and studied. MWA drives in and partially activates the MLD dopants; the resultant SDP features an ultra-shallow depth (< 5nm) and an abrupt steepness (< 0.8 nm/dec). The dopant activation of the devices experienced MLD and MWA is further enhanced by the nonmelting COLSA without dopant diffusion, and which can also avoid fin deformation and recover surface defects left by fin patterning. Thanks to the enhanced dopant activation by COLSA, the SDP-FinTFTs overall exhibit better performance than the SDP-FinTFTs without COLSA and the conventional implanted (imp) FinTFTs in terms of subthreshold swing (S.S.), on-currents (I-on by 160% compared to the SDP-FinTFTs without COLSA) and on/off current ratio (I-on/I-off > 10(7)) for 3D stacked ICs applications. Our results reveal the potential of the proposed SDP formed by MLD, MWA and COLSA enabling a JLFinTFT showing excellent performance.
Preparation of Cu2ZnSnS4 (CZTS) sputtering target and its application to the fabrication of CZTS thin-film solar cells
(2016-01-05)
Lin, Yu-Pin
;
Chi, Yi-Fang
;
Hsieh, Tsung-Eong
;
Chen, Yen-Chih
;
Huang, Kun-Ping
The CuS, ZnS and SnS2 raw powders were adopted as the starting materials for preparing the 2-inch Cu2ZnSnS4 (CZTS) sputtering target. The powders were mixed at various molar ratios of Cu:Zn:Sn:S = 1.6:1:1:4, 1.8:1:1:4 and 2:1:1:4, pressed into 6-mm pellet forms, and then sintered at different temperatures for 8 h. Accordingly, the influence of powder constitution and heat-treatment conditions on the microstructure, composition and morphology of CZTS pellets were investigated. Microstructure and composition analyses indicated that the sample prepared with the Cu molar ratio of 1.6 and sintered at 600 degrees C for 8 h forms the kesterite CZTS single-phase structure with the Cu-poor/Zn-rich composition. The 2-inch CZTS sputtering target was prepared by utilizing the method established by the study of 6-mm pellets and adopted for depositing the CZTS thin films. The CZTS layer deposited at the working pressure of 1 mtorr followed by the sulfurization at 570 degrees C for 1 h possessed the stoichiometry of Cu24.15Zn14.73Sn10.75S50.37 which is the closest to the ideal stoichiometric ratio of 2:1:1:4. Moreover, it exhibited the bandgap of 1.5 eV, p-type carrier concentration of 2.8 x 1017 cm(-3) and mobility of 8.61 cm(2) V-1 s(-1). Such a CZTS layer was implanted in the thin-film solar cells with the device structure of Mo/CZTS/CdS/i-ZnO/IZO/Al. Under the AM1.5 illumination condition, the CZTS thin-film solar cell sample with the open-circuit voltage of 0.52 V, the short-circuit current density of 19.17 mA/cm(2), the fill factor of 52.7% and the conversion efficiency of 5.2% was achieved. (C) 2015 Published by Elsevier B.V.
Simulations of Electric Field Distributions by the Susceptor-Coupling Effects for 2.45GHz Microwave inside Microwave Chamber
(2015)
Hsueh, Fu-Kuo
;
Chang, Chih-Chen
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Huang, Kun-Ping
;
Lee, Yao-Jen
;
Wu, Wen-Fa