Browsing by Author "Huang, LS"

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The implementation of an intelligent logistics tracking system utilizing RFID
(2004)
Lo, CC
;
Hsieh, W
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Huang, LS
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資訊管理與財務金融系註：原資管所+財金所
;
Department of Information Management and Finance
Due to globalization and the advancement of technology, the differences are lessened among businesses in terms of IT capabilities and product quality. Operation cost has become a critical key factor of success that determines company's profit level, as well as its competence in the market. Under the environment of electronic-commerce, logistics in the supply chain ensures a stable supply of stocks to satisfy customer's demands. An efficient supply chain requires a sound inventory system and operates in coordination with well designed shipping processes. Present shipping process uses barcode in tracking the flow of materials, however, scanning barcode one at a time is tedious and inefficient. Recently, RFID has been regarded as an important technology that influences the growth of global industries in the near future. RFID is able to effectively reduce the overall cost of logistics. However, application of RFID on supply chain management is still at its infant stage. Therefore, this research attempts to develop a prototype of a Smart Logistics Tracking System (SLTS) utilizing RFID. The proposed system aims to replace barcode with RFID, eradicate the time-consuming scanning procedure and ensures an efficient flow of materials. SLTS provides a cargo tracking platform that reports real-time location of the cargo and its flow.
Valence-band tunneling enhanced hot carrier degradation in ultra-thin oxide nMOSFETs
(2000)
Tsai, CW
;
Gu, SH
;
Chiang, LP
;
Wang, TH
;
Liu, YC
Enhanced hot carrier degradation with stress V-g in the valence-band tunneling regime is observed. This degradation is attributed to channel hole creation by valence-band electron tunneling. The created holes provide for Auger recombination with electrons in the channel and thus increase hot electron energy. The valence-band tunneling enhanced hot carrier degradation becomes more serious as gate oxide thickness is reduced. In ultra-thin gate oxide nMOSFETs, our result shows that the valence-band tunneling enhanced degradation, as opposed to max. Tb stress induced degradation, exhibits positive dependence on substrate bias. This phenomenon may cause a severe reliability issue in positively biased substrate or floating substrate devices.