Browsing by Author "Huang, LT"

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Electrical properties of rapid thermal-enhanced low pressure chemical vapor deposited Ta2O5 thin films
(1999-03-01)
Lee, CJ
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Huang, LT
;
Ezhilvalavan, S
;
Tseng, TY
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電子工程學系及電子研究所
Electrical properties of rapid thermal-enhanced low pressure chemical vapor deposited Ta2O5 thin films subjected to an in situ two-step postannealing process were studied. Films treated by rapid thermal annealing in O-2 at 550 degrees C for 90 s followed by plasma O-2 at 550 degrees C for 30 s exhibit a leakage current density of 7.91 x 10(-9) A/cm(2) at an applied electric field of 100 kV/cm and a dielectric constant of similar to 38. The decrease in leakage current density of the annealed Ta2O5 films in comparison to the as-deposited films is attributed mainly to the effective reduction of carbon impurities and oxygen vacancies by the two-step postannealing process. (C) 1999 The Electrochemical Society. S1099-0062(98)08-064-X. All rights reserved.
Lateral migration of trapped holes in a nitride storage flash memory cell and its qualification methodology
(2004-09-01)
Zous, NK
;
Lee, MY
;
Tsai, WJ
;
Kuo, A
;
Huang, LT
The negative threshold voltage (V-t) shift of a nitride storage flash memory cell in the erase state will result in an increase in leakage current. By utilizing a charge pumping method, we found that trapped hole lateral migration is responsible for this V-t shift. Hole transport in nitride is characterized by monitoring gate induced drain leakage current and using a thermionic emission model. The hole emission induced V-t shift shows a linear correlation with bake time in a semi-logarithm plot and its slope depends on the bake temperature. Based on the result, an accelerated qualification method for the negative V-t drift is proposed.