Browsing by Author "Huang, Li-Chun"

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A Low-Cost Wear-Leveling Algorithm for Block-Mapping Solid-State Disks
(2011-01-01)
Chang, Li-Pin
;
Huang, Li-Chun
;
資訊工程學系
;
Department of Computer Science
Multilevel flash memory cells double or even triple storage density, producing affordable solid-state disks for end users. However, flash lifetime is becoming a critical issue in the popularity of solid-state disks. Wear-leveling methods can prevent flash-storage devices from prematurely retiring any portions of flash memory. The two practical challenges of wear-leveling design are implementation cost and tuning complexity. This study proposes a new wear-leveling design that features both simplicity and adaptiveness. This design requires no new data structures, but utilizes the intelligence available in sector-translating algorithms. Using an on-line tuning method, this design adaptively tunes itself to reach good balance between wear evenness and overhead. A series of trace-driven simulations show that the proposed design outperforms a competitive existing design in terms of wear evenness and overhead reduction. This study also presents a prototype that proves the feasibility of this wear-leveling design in real solid-state disks.
A Low-Cost Wear-Leveling Algorithm for Block-Mapping Solid-State Disks
(2011)
Chang, Li-Pin
;
Huang, Li-Chun
;
資訊工程學系
;
Department of Computer Science
Multilevel flash memory cells double or even triple storage density, producing affordable solid-state disks for end users. However, flash lifetime is becoming a critical issue in the popularity of solid-state disks. Wear-leveling methods can prevent flash-storage devices from prematurely retiring any portions of flash memory. The two practical challenges of wear-leveling design are implementation cost and tuning complexity. This study proposes a new wear-leveling design that features both simplicity and adaptiveness. This design requires no new data structures, but utilizes the intelligence available in sector-translating algorithms. Using an on-line tuning method, this design adaptively tunes itself to reach good balance between wear evenness and overhead. A series of trace-driven simulations show that the proposed design outperforms a competitive existing design in terms of wear evenness and overhead reduction. This study also presents a prototype that proves the feasibility of this wear-leveling design in real solid-state disks.
An Adaptive, Low-Cost Wear-Leveling Algorithm for Multichannel Solid-State Disks
(2013-12-01)
Chang, Li-Pin
;
Chou, Tung-Yang
;
Huang, Li-Chun
;
資訊工程學系
;
Department of Computer Science
Multilevel flash memory cells double or even triple storage density, producing affordable solid-state disks for end users. As flash memory endures only limited program-erase cycles, solid-state disks employ wear-leveling methods to prevent any portions of flash memory from being retired prematurely. Modern solid-state disks must consider wear evenness at both block and channel levels. This study first presents a block-level wear-leveling method whose design has two new ideas. First, the proposed method reuses the intelligence available in flash-translation layers so it does not require any new data structures. Second, it adaptively tunes the threshold of block-level wear leveling according to the runtime write pattern. This study further introduces a new channel-level wear-leveling strategy, because block-level wear leveling is confined to a channel, but realistic workloads do not evenly write all channels. The proposed method swaps logical blocks among channels for achieving an eventually-even state of channel lifetimes. A series of trace-driven simulations show that our wear-leveling method outperforms existing approaches in terms of wear evenness and overhead reduction.