Browsing by Author "Huang, MM"

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Annealing dynamics of nitrogen-implanted GaAs films investigated by current-voltage and deep-level transient spectroscopy
(2000-04-17)
Chen, JF
;
Wang, JS
;
Huang, MM
;
Chen, NC
;
電子物理學系
We present electrical data to show that, after nitrogen implantation, GaAs films become resistive after high-temperature annealing. The activation energies of the resistance are determined to be 0.34, 0.59, and 0.71 eV after annealing at 500, 700, and 950 degrees C, respectively. The increase in the activation energy with increasing annealing temperature can be explained by the results of traps detected in deep-level transient spectroscopy, where two traps at 0.32 and 0.70 eV are observed in the samples after annealing. The intensity of the trap at 0.32 eV is found to reduce by annealing. By comparing to the result of the x-ray diffraction, we suspect that this trap is related to the lattice-expansion defects. The trap at 0.70 eV is observed only in samples annealed at high temperatures. Since this trap contributes to the high-resistive effect, we believe that it is associated with the nitrogen ions. (C) 2000 American Institute of Physics. [S0003-6951(00)04716-1].
Annealing temperature dependence of electric conduction and capacitance dispersion in nitrogen-implanted GaAs
(2001-05-01)
Chen, JF
;
Huang, MM
;
Wang, JS
;
電子物理學系
;
Department of Electrophysics
The annealing behavior of nitrogen-implanted GaAs samples has been investigated by secondary ion mass spectroscopy, current-voltage (I-V) and capacitance-frequency (C-F) measurements. The I-V data show that the conductivity of as-implanted samples is dominated by variable-range hopping beta een defect states below 300 K. The implanted layer becomes highly resistive after annealing. The activation energy of the resistance is found to increase from 0.2 eV for as-implanted samples to 0.71 eV for 950 degreesC-annealed samples. Significant capacitance dispersion is observed over frequency for implanted samples. Based on a proposed equivalent circuit, the high-frequency capacitance dispersion is shown to be the result. of resistance-capacitance (RC) time constant effects. The increase of activation energy of the resistance can be explained by the creation of deep traps by high temperature annealing. Traps at 0.69 eV and 0.82 eV are detected for 700 degreesC and 950 degreesC-annealing, respectively.