Browsing by Author "Huang, Ming-Hui"

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Compact Circularly-Polarized Slot Antenna with Enhanced Impedance and Axial-Ratio Bandwidths
(2019-01-01)
Chi, Pei-Ling
;
Huang, Ming-Hui
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電機工程學系
;
Department of Electrical and Computer Engineering
This paper proposes a compact circularly-polarized slot antenna with enhanced impedance and axial-ratio bandwidths. To substantially increase the axial-ratio bandwidth, the microstrip feedline is asymmetrically placed underneath the slot and several metal stubs are protruded from slot perimeter to introduce proper current distribution along two orthogonal directions. The antenna prototype achieves the measured 10-dB impedance bandwidth, the 3-dB axial-ratio bandwidth, and the peak gain of 120.8%, 95%, and 4.33 dBic, respectively. This antenna has a compact size of 0.315 lambda(0) x0.315 lambda(0) x0.02 lambda(0) at the lowest operating frequency.
High-Gain Patch-Fed 3D-Printing Fresnel Zone Plate Lens Antenna for 60-GHz Communications
(2018-01-01)
Chi, Pei-Ling
;
Pao, Chi-Hsien
;
Huang, Ming-Hui
;
Yang, Tao
;
電機工程學系
This paper presents a high-gain Fresnel zone plate lens antenna designed for 60-GHz systems. Manufactured with the 3D printing technology and fed by a simple patch on the substrate, the proposed Fresnel lens antenna allows for low-cost fabrication and easy integration with planar circuitry. Experimental results show that the prototype antenna can achieve a 10-dB impedance bandwidth from 56.6 GHz to > 67 GHz and the peak gain of 14 similar to 20 dBi across the bandwidth, corresponding to gain enhancement of 9.2 similar to 10.9 dB.
High-performance p-channel polycrystalline-germanium thin-film transistors via excimer laser crystallization and counter doping
(2016-04-01)
Liao, Chan-Yu
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Huang, Ching-Yu
;
Huang, Ming-Hui
;
Chou, Chia-Hsin
;
Cheng, Huang-Chung
High-quality polycrystalline-germanium (poly-Ge) thin films have been successfully fabricated by excimer laser crystallization (ELC). Grains as large as 1 mu m were achieved by ELC at 300 mJ/cm(2). Meanwhile, the defect-generated hole concentrations in Ge thin films were significantly reduced. Furthermore, the majority carriers could then be converted to n-type by counter doping (CD) with a suitable dose. Then, high-performance p-channel Ge thin-film transistors (TFTs) with a high on/off current ratio of up to 1.7 x 10(3) and a high field-effect mobility of up to 208 cm(2) V-1 s(-1) were demonstrated for a channel width and length both of 0.5 mu m. It was revealed that ELC combined with CD is effective for attaining highp-erformance p-channel poly-Ge TFTs. (C) 2016 The Japan Society of Applied Physics
High-performance p-channel polycrystalline-germanium thin-film transistors via excimer laser crystallization and counter doping
(2016-04)
Liao, Chan-Yu
;
Huang, Ching-Yu
;
Huang, Ming-Hui
;
Chou, Chia-Hsin
;
Cheng, Huang-Chung
High-quality polycrystalline-germanium (poly-Ge) thin films have been successfully fabricated by excimer laser crystallization (ELC). Grains as large as 1 mu m were achieved by ELC at 300 mJ/cm(2). Meanwhile, the defect-generated hole concentrations in Ge thin films were significantly reduced. Furthermore, the majority carriers could then be converted to n-type by counter doping (CD) with a suitable dose. Then, high-performance p-channel Ge thin-film transistors (TFTs) with a high on/off current ratio of up to 1.7 x 10(3) and a high field-effect mobility of up to 208 cm(2) V-1 s(-1) were demonstrated for a channel width and length both of 0.5 mu m. It was revealed that ELC combined with CD is effective for attaining highp-erformance p-channel poly-Ge TFTs. (C) 2016 The Japan Society of Applied Physics
High-performance p-channel thin-film transistors with lightly doped n-type excimer-laser-crystallized germanium films
(2017-06-01)
Liao, Chan-Yu
;
Huang, Ching-Yu
;
Huang, Ming-Hui
;
Huang, Wen-Hsien
;
Shen, Chang-Hong
High-performance polycrystalline-germanium (poly-Ge) thin-film transistors (TFTs) fabricated with lightly doped Ge thin films by excimer laser crystallization (ELC) and counter doping (CD) have been demonstrated. High-quality n-type Ge thin films with a grain size as large as 1 mu m were fabricated by ELC in the super lateral-growth regime and CD at a dose of 1 x 10(13) cm(-2) or higher. Consequently, a superior field-effect mobility of 271cm(2)V(-1)s(-1) and a high on/off current ratio of 2.7 x 10(3) have been obtained for p-channel Ge TFTs with the channel width and length of both 0.5 mu m fabricated by ELC at 300mJ/cm(2) and CD at a dose of 1 x 10(13)cm(-2). The effects of ELC conditions and CD dose on the electrical characteristics of p-channel Ge TFTs were also investigated. (C) 2017 The Japan Society of Applied Physics.