Browsing by Author "Huang, Pin-Wei"

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Study on the effects of Si implantation on the interface of 4H-SiC lateral MOSFETs
(2020-04-01)
Jiang, Jheng-Yi
;
Hung, Jia-Qing
;
Huang, Pin-Wei
;
Wu, Tian-Li
;
Huang, Chi-Fang
In this study, Si implantation was used to improve the interface properties of SiC/SiO2 in 4H-SiC lateral MOSFETs. In lateral n-channel MOSFETs, a 4%-6% improvement on the linear and saturation current was observed with Si implantation, From high/low-frequency CV measurements, the Si implanted n-type MOS capacitor showed a 20% lower interface state density than the non-implanted ones at an energy level of E-C - E = 0.2 eV, without degrading oxide integrity. Lateral p-channel MOSFETs, on the other hand, showed a 36.5% reduction in the linear current and a 16.6% reduction in the saturation current with Si implantation. Furthermore, the temperature coefficients of lateral and vertical MOSFETs implanted, by Si ere monitored up to 175 degrees C. The temperature coefficients of the Si-implanted n-channel and p-channel lateral MOSFETs were nearly identical to those of their non-implanted counterparts. (C) 2020 The Japan Society of Applied Physics
Temperature-oriented experiment and simulation as corroborating evidence of MOSFET backscattering theory
(2007-02-01)
Chen, Ming-Jer
;
Yan, Shih-Guei
;
Chen, Rong-Ting
;
Hsieh, Chen-Yu
;
Huang, Pin-Wei
The MOSFET backscattering theory relies on a so-called "k(B)T" layer. In this letter, we adopt two different approaches to examine the temperature dependencies of the width spanned by this critical zone. First of all, a 55-nm channel length n-MOSFET is extensively characterized at three temperatures of 233 K, 263 K, and 298 K while undergoing a parameter decoupling/transformation process. A unique relationship is straightforwardly created and is comparable with that in the literature: The width of the "kBT" layer is proportional to the square root of temperature. The case of 77 K is also projected. Other corroborating evidence is a Monte Carlo particle simulation conducted on an 80-nm-long silicon conductor with the "kBT" layer's width proportional to the temperature in the high field region. Without adjusting any parameters, the backscattering theory is shown to work well for the demonstrated temperatures down to 77 K.