Browsing by Author "Huang, R. T."

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Local structure and magnetic properties of ferromagnetic GaMnAs made by helium ion induced epitaxial crystallization annealing
(2014-08-15)
Chen, C. H.
;
Niu, H.
;
Yan, D. C.
;
Hsieh, H. H.
;
Huang, R. T.
In this study we show GaMnAs preparation by Mn implantation in GaAs followed by helium ion beam induced epitaxial crystallization annealing. The characteristics of the Mn-implanted layer were investigated by X-ray diffraction, and transmission electron microscopy. The magnetic nature of the Mn-implanted layer was investigated with a superconducting quantum interference device. Structure analysis showed that Mn ions were incorporated substitutionally into the GaAs lattice without the formation of any detectable secondary phases. The remanent magnetic moment exhibited room temperature ferromagnetism. Additional measurement using X-ray magnetic circular dichroism also revealed that the carriers were spin polarized. (C) 2014 Elsevier B.V. All rights reserved.
Local structure and magnetic properties of ferromagnetic GaMnAs made by helium ion induced epitaxial crystallization annealing
(2014-08-15)
Chen, C. H.
;
Niu, H.
;
Yan, D. C.
;
Hsieh, H. H.
;
Huang, R. T.
In this study we show GaMnAs preparation by Mn implantation in GaAs followed by helium ion beam induced epitaxial crystallization annealing. The characteristics of the Mn-implanted layer were investigated by X-ray diffraction, and transmission electron microscopy. The magnetic nature of the Mn-implanted layer was investigated with a superconducting quantum interference device. Structure analysis showed that Mn ions were incorporated substitutionally into the GaAs lattice without the formation of any detectable secondary phases. The remanent magnetic moment exhibited room temperature ferromagnetism. Additional measurement using X-ray magnetic circular dichroism also revealed that the carriers were spin polarized. (C) 2014 Elsevier B.V. All rights reserved.
Rolling up Ge microtube from bare-Ge substrate
(2014-08-15)
Chen, C. H.
;
Niu, H.
;
Huang, R. T.
;
Lee, C. P.
;
奈米科技中心
We show Ge microtubes can be rolled-up from bare-Ge wafer at almost any position, once these films are released from its substrate. (C) 2014 Elsevier B.V. All rights reserved.
Rolling up Ge microtube from bare-Ge substrate
(2014-08-15)
Chen, C. H.
;
Niu, H.
;
Huang, R. T.
;
Lee, C. P.
;
奈米科技中心
We show Ge microtubes can be rolled-up from bare-Ge wafer at almost any position, once these films are released from its substrate. (C) 2014 Elsevier B.V. All rights reserved.