Browsing by Author "Huang, RH"

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High-performance poly-silicon TFTs using HfO2 gate dielectric
(2006-05-01)
Lin, CP
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Tsui, BY
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Yang, MJ
;
Huang, RH
;
Chien, CH
High-performance low-temperature poly-Si thin-film transistors (TFTs) using high-kappa (HFO2) gate dielectric is demonstrated for the first time. Because of the high gate capacitance density and thin equivalent-oxide thickness contributed by the high-kappa gate dielectric, excellent device performance can be achieved including high driving current, low subthreshold swing, low threshold voltage, and high ON/OFF current ratio. It should be noted that the O.N-state current of high-kappa. gate-dielectric TFTs is almost five times higher than that of SiO2 gate-dielectric TFTs. Moreover, superior threshold-voltage (V-th) rolloff property is also demonstrated. All of these results suggest that high-kappa gate dielectric is a good choice for high-performance TFTs.
Study of thermal stability of nickel monogermanide on single- and polycrystalline germanium substrates
(2005-06-20)
Hsu, SL
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Chien, CH
;
Yang, MJ
;
Huang, RH
;
Leu, CC
We have investigated the thermal stability of nickel monogermanide (NiGe) films formed by rapid thermal annealing on both single- and polycrystalline Ge substrates. We found that the NiGe phase is the only one present after nickel germanidation in the temperature range 400-700 degrees C. A fairly uniform NiGe film formed on the single-crystalline Ge; it possessed excellent resistivity (15.6 mu Omega cm) and was thermally stable up to 550 degrees C, but it degraded rapidly at higher temperatures as a result of agglomeration. In contrast, the NiGe film formed on the polycrystalline Ge exhibited much poorer thermal stability, possibly because of polycrystalline Ge grain growth, which resulted in columnar NiGe grains interlaced with Ge grains that had a dramatically increased sheet resistance. As a result, we observed that the sheet resistances of NiGe lines subjected to annealing at 500 degrees C depended strongly on the linewidth when this width was comparable with the grain size of the polycrystalline Ge. (c) 2005 American Institute of Physic's.