Browsing by Author "Huang, Rulin"

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A Millimeter-Wave CMOS Transceiver With Digitally Pre-Distorted PAM-4 Modulation for Contactless Communications
(2019-06-01)
Kim, Yanghyo
;
Hu, Boyu
;
Du, Yuan
;
Cho, Wei-Han
;
Huang, Rulin
This paper presents a millimeter-wave (127 GHz) CMOS transceiver with a digital pre-distortion capable PAM-4 modulator for contactless communications. The transmitter upconverts PAM-4 modulated baseband signals through a free-running 127-GHz oscillator and single-balanced mixer, and it delivers PAM-4 modulated carrier signals to a folded-dipole antenna, which is designed on a FR408HR substrate. The receiver's low-noise amplifier provides a 10-dB gain, and the self-mixer downconverts carrier-modulated PAM-4 signals to base-band signals without the necessity of carrier synchronization. The PAM-4 modulator pre-distorts the baseband signals and corrects the non-linear characteristics of the transmitter's upconversion mixer and the receiver's downconversion self-mixer. Designed and fabricated in a 65-nm CMOS process, the demonstrated system transfers 20 Gb/s of PAM-4 modulated data through a 1-mm air gap and consumes 79.5 mW (transmitter: 50.8 mW and receiver: 28.7 mW) of power under a 1.2-V supply, achieving a 3.98-pJ/bit energy efficiency. The communication distance is extended to 3 cm by inserting a dielectric waveguide between the same transceiver.
A W-Band FMCW Radar System-on-Chip Employing Synchronized Switching Digitally Controlled Artificial Dielectric for Chirp
(2019-01-01)
Tang, Adrian
;
Kim, Yanghyo
;
Zhang, Yan
;
Huang, Rulin
;
Chang, M. -C. Frank
This paper presents a fully integrated single-chip radar transceiver (including waveform generation) in 65nm CMOS technology. The single chip radar employs synchronously switched digitally controlled artificial dielectric (DiCAD) in order to extend the FMCW chirp bandwidth leading to higher axial radar resolutions. Measurements with a prototype device demonstrate a factor of 2 increase in chirp bandwidth although increase by larger factors is possible. The entire radar chip occupies 2.5 x 1.7 mm of silicon area and consumes 320 mW of DC power.