Browsing by Author "Huang, S. H."

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Analytical Solutions Based on Fourier Cosine Series for the Free Vibrations of Functionally Graded Material Rectangular Mindlin Plates
(2020-09-01)
Huang, Chiung-Shiann
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Huang, S. H.
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土木工程學系
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Department of Civil Engineering
This study aimed to develop series analytical solutions based on the Mindlin plate theory for the free vibrations of functionally graded material (FGM) rectangular plates. The material properties of FGM rectangular plates are assumed to vary along their thickness, and the volume fractions of the plate constituents are defined by a simple power-law function. The series solutions consist of the Fourier cosine series and auxiliary functions of polynomials. The series solutions were established by satisfying governing equations and boundary conditions in the expanded space of the Fourier cosine series. The proposed solutions were validated through comprehensive convergence studies on the first six vibration frequencies of square plates under four combinations of boundary conditions and through comparison of the obtained convergent results with those in the literature. The convergence studies indicated that the solutions obtained for different modes could converge from the upper or lower bounds to the exact values or in an oscillatory manner. The present solutions were further employed to determine the first six vibration frequencies of FGM rectangular plates with various aspect ratios, thickness-to-width ratios, distributions of material properties and combinations of boundary conditions.
Growth and optical properties of ZnTe quantum dots on ZnMgSe by molecular beam epitaxy
(2015-09-01)
Fan, W. C.
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Huang, S. H.
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Chou, W. C.
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Tsou, M. H.
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Yang, C. S.
Self-assembled type-II ZnTe quantum dots (QDs) were grown on GaAs (0 0 1) substrates with Zn1-xMgxSe (x=0.24 and 0.52) buffer layers by molecular beam epitaxy. The optical properties of ZnTe QDs were investigated by low-temperature photoluminescence (PL) and time-resolved PL. An abrupt variation of the PL peak energy with coverage implies the existence of wetting layer of 3.2 MLs and 40 MLs for the Mg concentration x=0.24 and 0.52, respectively. The thickness of wetting layer is larger than that of Zaire QDs grown on ZnSe buffer layers because the strain between ZaTe and Zn1-xMgxSe is smaller. The non-mono-exponential decay profiles reflect the processes of carrier transfer and recapture. The Kohlrausch\'s stretching exponential well fits the decay profiles of ZaTe/Zn1-xMgxSe QDs. (C) 2015 Elsevier B.V. All rights reserved.
Ni silicide formation on epitaxial Si(1-y)C(y)/(001) layers
(2010-10-01)
Lee, S. W.
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Huang, S. H.
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Cheng, S. L.
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Chen, P. S.
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Wu, W. W.
The formation of Ni silicides on Si(1 - y)C(y) (y=0.01 and 0.018) epilayers grown on Si(001) has been investigated. The presence of C atoms was found to significantly retard the growth kinetics of NiSi and enhances the thermal stability of thin NiSi films. For Ni(11 nm)/Si(0.982)C(0.018) samples, the process window of NiSi was shifted and extended to 450-700 degrees C. Moreover, there was an additional strain introduced into the Si(1 - y)C(y) epilayers during Ni silicidation. This work shows the potential of Ni silicidation on Si(1y)C(y) for device applications. (C) 2010 Elsevier B.V. All rights reserved.
Ni silicide formation on epitaxial Si1-yCy/(001) layers
(2010-10-01)
Lee, S. W.
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Huang, S. H.
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Cheng, S. L.
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Chen, P. S.
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Wu, W. W.
The formation of Ni silicides on Si1 - yCy (y=0.01 and 0.018) epilayers grown on Si(001) has been investigated. The presence of C atoms was found to significantly retard the growth kinetics of NiSi and enhances the thermal stability of thin NiSi films. For Ni(11 nm)/Si0.982C0.018 samples, the process window of NiSi was shifted and extended to 450-700 degrees C. Moreover, there was an additional strain introduced into the Si1 - yCy epilayers during Ni silicidation. This work shows the potential of Ni silicidation on Si1yCy for device applications. (C) 2010 Elsevier B.V. All rights reserved.