Browsing by Author "Huang, S. S."

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Flow Rate's Influence on Low Temperature Silicon Oxide Deposited by Atmospheric Pressure Plasma Jet for Organic Thin Film Transistor Application
(2010)
Chang, K. M.
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Huang, S. S.
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Cheng, C. H.
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
Low temperature processes and high quality gate insulator are very important for organic thin film transistors (OTFTs). We utilized atmospheric pressure plasma jet (APPJ) to deposit silicon oxide as gate insulator of OTFTs at low temperature. We found carrier gas's flow rate would influence the deposition mechanism which lead to influence surface roughness and film quality. Leakage current density of our proposed silicon oxide was about 2.53E-8 A/cm(2) at 0.5 MV/cm. Our proposed OTFTs shows a low subthreshold swing of only 700 mV/dec., a low threshold voltage of -0.8 V, a low operation voltage of -2 V. The low-voltage OTFTs would reduce the power consummation of flexible display.