Browsing by Author "Huang, SC"

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CCDES - A collaborative compound document editing system
(1996-06-01)
Lin, CH
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Huang, SC
;
Yuan, SM
;
資訊工程學系
;
Department of Computer Science
A collaborative editing systems allows co-authors at different locations to edit a shared view of a single document simultaneously. A compound document binds various types of information to create a single seamless presentation. A collaborative compound document editing system is developed to combine both the systems described above. It supports distributed editing with replicated compound documents, and integrates notification mechanisms into concurrence control modules. The real-time conversational facilities and the mechanisms for tolerating the process faults are provided. The collaborative compound document editing system is endured with the coordinating and data exchanging capabilities. This paper also discusses design issues such as multi-user interfaces and the presentation of compound documents, and proposes our approaches.
Degradation of capacitance-voltage characteristics induced by self-heating effect in poly-si TFTs
(2006)
Tai, YH
;
Huang, SC
;
Chiu, HL
;
光電工程學系
;
Department of Photonics
The degradation of poly-Si thin film transistors (TFTs) under self-heating stress was investigated via the capacitance between the source and the gate (C-GS), and that between the drain and the gate (C-GD). Consequently, the normalized C-GS and C-GD after stress positively shift 2 V for the gate voltage near flat band voltage. In addition, C-GS raises about 40% for the lower gate voltage, while C-GD raises only about 10%. With simulation results, it is found that the self-heating effect creates interface states near the source region and the deep states near drain, resulting in the different inclines of the of C-GS and C-GD curves.
Effect of TiN treated by rapid thermal annealing on properties of BST capacitors prepared by RF magnetron co-sputter system at low substrate temperature
(2000)
Teng, TH
;
Hwang, CC
;
Lai, MJ
;
Huang, SC
;
Chen, JS
In this work, (Ba0.7Sr0.3)TiO3 thin films on Pt/TiN/Ti/Si substrate were deposited by an RF magnetron co-sputter system at 300 degrees C in an Ar+O-2 mixed ambient. In the integration of BST capacitors, the diffusion barrier (TiN) under bottom electrodes is one of the key issues. To obtain a stable and excellent diffusion barrier against inter-diffusion between Pt and Si, as well as against being oxidized during BST deposition, TiN was treated by a rapid thermal annealing (RTA) process. Experimental results indicated that proper RTA treatments resulted in a superior TiN barrier layer. In addition, low substrate temperature during BST deposition suppressed the phenomena of inter-diffusion and barrier oxidation. Furthermore, Pt hillocking, another problem during BST deposition because of high thermal budget, was also solved by reducing substrate temperature during BST deposition. The MIM (Pt/BST/Pt) structure was used in the experiments for electrical properties measurement. High dielectric constant (epsilon (r)=300), low leakage current (1.5x10(-8) A/cm(2)) under 0.1MV/cm, and 10 year lifetime under 1.6MV/cm were achieved with an Ar+O-2 mixed ambient at a low substrate temperature (300 degrees C).
Effects of RCA clean-up procedures on the formation of roughened poly-Si electrodes for high-density DRAMs' capacitors
(1997-11-01)
Liu, HW
;
Lai, WK
;
Yu, SY
;
Huang, SC
;
Cheng, HC
A novel structure, the phosphorus-implanted poly-Si films treated with phosphoric acid (H3PO4) and cleaned by standard RCA cleanup procedures, has been demonstrated as the bottom electrodes of DRAMs' stacked capacitors. After the H3PO4 treatment and RCA cleaning process, micro-island structures are formed on the poly-Si surface of the storage electrodes, The NH4OH + H2O2 + H2O (SC-1) solution in the RCA cleaning procedures is the main component to change the porous surfaces and engraved structures, formed by H3PO4 treatment, into micro-islands. Although the electrical properties are slightly degraded compared to the control samples, but they fulfill the requirements of high-density DRAMs, resulting from the increment of cell capacitance. (C) 1997 Elsevier Science S.A.
Effects of RCA clean-up procedures on the formation of roughened poly-Si electrodes for high-density DRAMs' capacitors
(1997-11-01)
Liu, HW
;
Lai, WK
;
Yu, SY
;
Huang, SC
;
Cheng, HC
A novel structure, the phosphorus-implanted poly-Si films treated with phosphoric acid (H3PO4) and cleaned by standard RCA cleanup procedures, has been demonstrated as the bottom electrodes of DRAMs' stacked capacitors. After the H3PO4 treatment and RCA cleaning process, micro-island structures are formed on the poly-Si surface of the storage electrodes, The NH4OH + H2O2 + H2O (SC-1) solution in the RCA cleaning procedures is the main component to change the porous surfaces and engraved structures, formed by H3PO4 treatment, into micro-islands. Although the electrical properties are slightly degraded compared to the control samples, but they fulfill the requirements of high-density DRAMs, resulting from the increment of cell capacitance. (C) 1997 Elsevier Science S.A.
Energy-aware, load balanced routing schemes for sensor networks
(2004)
Huang, SC
;
Jan, RH
;
資訊工程學系
;
Department of Computer Science
This paper presents two energy-aware, load balanced routing schemes, called as maximum capacity path (MCP) scheme and MCP with path switching (MCP-PS) scheme, for sensor networks. In the MCP scheme, the sensor network is constructed into a layered network at first. Based on the layered network, every sensor node selects a shortest path with maximum capacity to sink. In MCP-PS, the node may switch its routing path to its sibling neighbors in order to share the traffic. The simulation results show that our MCP and MCP-PS schemes can achieve a better load-sharing and better endurance on network lifetime.
Formation and properties of roughened poly-Si electrodes for high-density DRAMs
(1997)
Liu, HW
;
Lin, ZJ
;
Yu, SY
;
Huang, SC
;
Cheng, SC
A novel structure, based upon phosphorus-implanted poly-Si films treated with phosphoric acid (H3PO4) and the standard RCA cleaning process, has been demonstrated as the bottom electrodes of DRAMs(1) stacked capacitors. After the H3PO4 treatment and the RCA cleaning process, micro-islands are formed on the poly-Si surface of the electrodes. For the capacitors with this novel structure, the capacitance value is 18.17 fF/mu m(2) and the effective oxide thickness is 18.9 Angstrom in comparison with conventional capacitors of 5.77 fF/mu m(2) and 59.5 Angstrom. The roughened poly-Si electrode can achieve a surface enlargement of 3.15 times. The leakage current density at +1.65V and -1.65V are 7.24 x 10(-8) A/cm(2) and -3.31 x 10(-8) A/cm(2), respectively, fulfilling the requirements of 256Mb DRAMs. Weibull plots of time-zero-dielectric-breakdown (TZDB) characteristics under ramping voltage test also show tight distribution and good electrical properties. It indicates that the phosphorus-implanted poly-Si films etched by H3PO4 and then cleaned with the standard RCA process can easily and simply increase the surface area and have good electrical properties fulfilling the requirements of 256Mb DRAMs and beyond.
High-peak-power AlGaInAs quantum-well 1.3-mu m laser pumped by a diode-pumped actively Q-switched solid-state laser
(2006-07-01)
Su, KW
;
Huang, SC
;
Li, A
;
Liu, SC
;
Chen, YF
We report a room-temperature high-peak-power AlGaInAs 1.36 mu m TEMOO laser pumped by a diode-pumped actively Q-switched Nd:YAG 1.06 mu m laser. With an average pump power of 1.0 W, an average output power of 140 mW was obtained at a pulse repetition rate of 10 kHz. With a peak pump power of 8.3 kW, the highest peak output power was 1.5 kW at a pulse repetition rate of 5 kHz. (c) 2006 Optical Society of America.
Investigation on ESD robustness of CMOS devices in a 1.8-v 0.15-mu m partially-depleted SOI salicide CMOS technology
(2001)
Ker, MD
;
Hong, KK
;
Chen, TY
;
Tang, H
;
Huang, SC
Electrostatic discharge (ESD) robustness of CMOS devices with four different layout structures fabricated in a 0.15-mum partially-depleted silicon-on-insulator (SOI) salicide CMOS process are verified by ESD tester. The second breakdown current (It2) of fabricated CMOS devices is also measured by the transmission line pulse generator (TLPG). The dependences of ESD robustness on the layout parameters of CMOS devices in this SOI CMOS process have been investigated to find the optimum layout rules for on-chip ESD protection design. The effectiveness of ESD clamp circuits designed with the gate-driven and substrate-triggered techniques are also compared in this SOI CMOS process.
Novel diode structures and ESD protection circuits in a 1.8-V 0.15-mu m partially-depleted SOI salicided CMOS process
(2001)
Ker, MD
;
Hung, KK
;
Tang, HTH
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Huang, SC
;
Chen, SS
Optimal MISO repetitive control system design using mixed time and frequency domain criteria
(1998-03-01)
Hu, JS
;
Yu, SH
;
Huang, SC
;
電控工程研究所
;
Institute of Electrical and Control Engineering
This paper presents an optimal repetitive controller design approach when both frequency and time domains criteria are considered. These criteria include limited control force, convergence rate, and robustness. In particular, the design formulation is based on MISO (multiple-input-single-output) plants which aim at solving nodal point problems encountered in flexible dynamic systems. Nodal points represent physical constraints for feedback control, especially when their frequencies are within the control bandwidth. If multiple control paths with distinct nodal frequencies are available, the proposed method is able to design controllers to compensate the effect and reach certain design objectives. The ellipsoid algorithm is used to calculate controllers' parameters. Experiments were conducted to demonstrate the proposed method.
Plasma process induced damage in sputtered TiN metal gate capacitors with ultra-thin nitrided oxide
(2000)
Chen, CC
;
Lin, HC
;
Chang, CY
;
Chao, TS
;
Huang, SC
A comprehensive study on plasma process induced damage (P2ID) in sputtered TiN metal-gated devices with 4nm N2O-nitrided oxide was performed. It is observed that the post-deposition RTA temperature affects both the flat-band voltage (Vfb) and interface state density (Dit). The TiN metal-gated devices also show a 8 Angstrom reduction in the effective oxide thickness, due to physical damage caused by sputtering and/or oxide consumption during the post annealing step. Finally, degradation in gate oxide integrity caused by severe charging damage during the additional plasma processes in the TiN metal gate process flow is also observed. The P2ID leads to significant degradation in charge-to-breakdown and gate leakage current increase, even for the genuinely robust nitrided oxide used in this study. Finally, N-2 plasma post-treatment is found to be effective in suppressing the gate leakage current.
Subwavelength gratings fabricated on semiconductor substrates via E-beam lithography and lift-off method
(2005-03-01)
Sun, KW
;
Huang, SC
;
Kechiantz, A
;
Lee, CP
;
電子工程學系及電子研究所
We present results of the fabrication and measurements on reflective polarizers consisting of stacked bi-layer subwavelength metal gratings prepared on GaAs (100) substrates. These linear gratings were fabricated using electron-beam direct-writing lithography and the lift-off method with periods less than the wavelength of light used for measurements. At normal incidence, the polarizer reflects the light polarized perpendicular to the grating lines (transverse magnetic polarization, TM polarized) but absorbs parallel-polarized light (transverse electric polarization, TE polarized). By optimizing structural parameters, the polarization extinction ratio close to 20 has been experimentally achieved at wavelength of 650 run.
The Trefftz method as an integral equation
(1995)
Huang, SC
;
Shaw, RP
;
交大名義發表
;
National Chiao Tung University
The Trefftz method may be described in terms of an integral equation formulation based on eigenfunction expansions rather than the usual element (BEM) solution method. Using an 'Embedding Integral Equation' approach, the Trefftz method may not only be seen to be related to integral equation methods but it is also seen to be amenable to partitioning, allowing more rapid convergence.
Zeeman studies of the first excited states of palladium and metal free phthalocyanines in Shpol'skii matrix
(1996-06-01)
Huang, SC
;
Chen, WH
;
交大名義發表
;
電子物理學系
;
National Chiao Tung University
Phthalocyanines (Pcs) are planar molecules of relatively high symmetry and exhibit magneto-optic effects in many ways. We report the Zeeman effect of the first excited states of palladium (Pd-) and free-base (H-2-) Pcs in a 5 K Shpol'skii matrix by direct observation of their fluorescence position shifts. From the experimental data an apparent angular momentum integral, coupling the lowest two Jahn-Teller stabilized crystal field split first excited states, Lambda', was found to be 2.7+/-0.1 (h) over bar for PdPc. No conclusive Lambda' was deduced for H(2)Pc but its value can be estimated to be around the theoretical value of 3 (h) over bar. The experimental data of H(2)Pc revealed a complex structure in the fluorescence band examined, which complicated the analysis of Lambda' but helped unravel the biexponential decay problem of the structure. We infer one narrower band in the structure has the previously reported lifetime of tau 6.3 ns, and the other broader band being similar to 1.8 cm(-1) higher, has tau 3.7 ns. We believe this composite situation also exists for the other tautomeric structure since it also exhibited biexponential decay. (C) 1996 American Institute of Physics.