Browsing by Author "Huang, Sheng-Hao"

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High-kappa Eu2O3 and Y2O3 Poly-Si Thin-Film Transistor Nonvolatile Memory Devices
(2013-07-01)
Pan, Tung-Ming
;
Yen, Li-Chen
;
Huang, Sheng-Hao
;
Lo, Chieh-Ting
;
Chao, Tien-Sheng
In this paper, we have successfully fabricated low-temperature polycrystalline silicon thin-film transistor (LTPS-TFT) nonvolatile memory devices employing high-kappa Eu2O3 and Y2O3 films as the charge trapping layer. The LTPS-TFT memory device uses band-to-band tunneling-induced hot hole injection and gate Fowler-Nordheim injection as the program and erase methods, respectively. Compared with the Y2O3 film, the LTPS-TFT memory device using an Eu2O3 charge-trapping layer exhibited a lower subthreshold swing and a larger memory window, a smaller charge loss, and a better endurance performance, presumably because of the higher charge-trapping efficiency of the Eu2O3 film.