Browsing by Author "Huang, Sung-Hung"

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Characteristics of IGZO TFT Prepared by Atmospheric Pressure Plasma Jet Using PE-ALD Al2O3 Gate Dielectric
(2012-04-01)
Wu, Chien-Hung
;
Chang, Kow-Ming
;
Huang, Sung-Hung
;
Deng, I-Chung
;
Wu, Chin-Jyi
This letter proposes a novel atmospheric pressure plasma jet (APPJ) method for indium-gallium-zinc-oxide (IGZO) deposition and use of the plasma-enhanced atomic layer deposition (PE-ALD) Al2O3 as gate dielectric. A nonvacuum and simple APPJ system was demonstrated for channel material deposition. High-transmittance nanocrystalline IGZO thin films were obtained. Excellent electrical characteristics were achieved, including a low V-T of 0.71 V, a small subthreshold swing of 276 mV/dec, a mobility of 8.39 cm(2)/(V . s), and a large I-on/I-off ratio of 1 x 10(8).
Performance improvement of pentacene-based organic thin-film transistor with HfO2 gate dielectrics treated by CF4 plasma
(2011)
Chang, Kow-Ming
;
Huang, Sung-Hung
;
Tseng, Yi-Wen
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Fluorine incorporation into the HfO2 gate dielectrics by post CF4 plasma treatment in an inductively coupled plasma chamber was proposed to improve gate leakage current and modify surface property for low-temperature fabrication. During the whole process, the temperature is controlled below 150 degrees C. The low-leakage HfO2 dielectric treated by CF4 plasma was characterized and then utilized in pentacene-based OTFTs. After CF4 plasma treatment, the gate leakage and field effect mobility were effectively improved. By integrating high-k HfO2 by CF4 plasma treatment and HMDS evaporation treatment, a low operating voltage (-4V), low threshold voltage (-1.12V), a low subthreshold swing (266 mV/decade), a field-effect mobility (0.029cm(2)/Vs) and an on/off current ratio (>10(4)) were obtained.
The Effect of Different Carrier Gases and Channel Thicknesses on the Characteristics of ZnO TFTs Prepared by Atmospheric Pressure Plasma Jet
(2011)
Chang, Kow-Ming
;
Huang, Sung-Hung
;
Chi, Chia-Wei
;
Wu, Chin-Jyi
;
Lin, Je-Wei
Thin film transistors (TFTs) with a ZnO channel layer deposited by atmospheric pressure plasma jet (APPJ) were demonstrated. ZnO channel layers were fabricated with a non-vacuum and low-temperature process (100 degrees C). The effects of different carrier gases (nitrogen gas and compressed dry air) and channel thickness on the characteristics of ZnO TFTs were investigated. Reactive oxygen species can effectively repair the oxygen vacancies result in a low leakage current. By reducing the channel thickness, the undesired source to drain current flow can be eliminated. By using CDA as a carrier gas and reducing the channel thickness, a subthreshold swing of 3.75 V/decade, a field-effect mobility of 3.49 cm(2)/Vs and a Ion/Ioff current ratio of 4.08x10(7) were obtained.
The effect of oxygen species on the ZnO TFT prepared by atmosphere pressure plasma jet
(2012)
Wu, Chien-Hung
;
Chang, Kow-Ming
;
Huang, Sung-Hung
;
Deng, I-Chung
;
Chi, Chia-Wei
Bottom-gate thin-film transistors (TFTs) were fabricated with ZnO channel layer deposited by atmospheric pressure plasma jet (APPJ). The effect of oxygen partial pressure on the ZnO TFT was investigated. The ZnO thin films were deposited at 100 degrees C, and oxygen gas was incorporated into plasma gas (N-2) in the percentage of 0%-1% (O-2/N-2+O-2). Reactive oxygen species could repair the oxygen vacancies during deposition, and the switching behavior was improved effectively. With increasing oxygen partial pressure, the ZnO thin films exhibited a more random orientation. By incorporating 0.69% O-2 into plasma gas, a threshold voltage of 26.7 V, a subthreshold swing of 3.89 V/decade, a field-effect mobility of 2.38 cm(2)/Vs and an I-on/I-off current ratio of 4.63x10(9) were obtained.
The effect of thermal annealing on the properties of IGZO TFT prepared by atmospheric pressure plasma jet
(2012)
Wu, Chien-Hung
;
Chang, Kow-Ming
;
Huang, Sung-Hung
;
Deng, I-Chung
;
Wu, Chin-Jyi
We fabricated bottom gate TFTs with IGZO channel layer deposited by atmospheric pressure plasma jet (APPJ). The effect of thermal annealing on the properties of IGZO TFTs was studied. After post annealing, the IGZO thin films showed a smooth and dense structure. The transistors annealed at 300 degrees C showed clear switching behavior with a negative threshold voltage of -0.571 V and a mobility of 2.6 cm(2)/V-s. After 500 degrees C post annealing, IGZO thin film showed an amorphous-like phase and the average transmittance is more than 80% in the visible range. Good electrical characteristics were achieved, including a threshold voltage of 6.74V, a subthreshold swing of 1.54 V/dec, a mobility of 10.31 cm(2)/V-s and a large I-on/I-off ratio of 3.28x10(8).
Transparent conductive indium-doped zinc oxide films prepared by atmospheric pressure plasma jet
(2011-05-31)
Chang, Kow-Ming
;
Huang, Sung-Hung
;
Wu, Chin-Jyi
;
Lin, Wei-Li
;
Chen, Wei-Chiang
Atmospheric-pressure plasma processing has attracted much interest for industrial applications due to its low cost, high processing speed and simple system. In this study, atmospheric-pressure plasma jet technique was developed to deposit indium-doped zinc oxide films. The inorganic metal salts of zinc nitrate and indium nitrate were used as precursors for Zn ions and In ions, respectively. The effect of different indium doping concentration on the morphological, structural, electrical and optical properties of the films was investigated. Grazing incidence X-ray diffraction results show that the deposited films with a preferred (002) orientation. The lowest resistivity of 1.8 x 10(-3) Omega cm was achieved with the 8 at.% indium-doped solution at the substrate temperature of 200 degrees C in open air, and average transmittance in the visible region was more than 80%. (C) 2011 Elsevier B.V. All rights reserved.