Browsing by Author "Huang, T. J."

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Gallium Nitride (GaN) High-Electron-Mobility Transistors with Thick Copper Metallization Featuring a Power Density of 8.2 W/mm for Ka-Band Applications
(2020-02-01)
Lin, Y. C.
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Chen, S. H.
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Lee, P. H.
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Lai, K. H.
;
Huang, T. J.
Copper-metallized gallium nitride (GaN) high-electron-mobility transistors (HEMTs) using a Ti/Pt/Ti diffusion barrier layer are fabricated and characterized for Ka-band applications. With a thick copper metallization layer of 6.8 mu m adopted, the device exhibited a high output power density of 8.2 W/mm and a power-added efficiency (PAE) of 26% at 38 GHz. Such superior performance is mainly attributed to the substantial reduction of the source and drain resistance of the device. In addition to improvement in the Radio Frequency (RF) performance, the successful integration of the thick copper metallization in the device technology further reduces the manufacturing cost, making it extremely promising for future fifth-generation mobile communication system applications at millimeter-wave frequencies.
Study of Enhancement-Mode Tri-Gate InAs HEMTs for Low Noise Application
(2019-01-01)
Wang, C.
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Lin, Y. C.
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Kuo, C. N.
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Lee, M. W.
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Yao, J. N.
An enhancement-mode tri-gate InAs HEMT is investigated for low noise application in this paper. The 3-D tri-gate structure is sidewall-gate-metal connected to InAlAs layers, the gate connection to the InAlAs layers increases their potential to the positive direction with increasing the gate bias, resulting gate control ability enhancement. Compared with planar device, the tri-gate device shows high transconductance and low noise figure. The enhancement-mode tri-gate device exhibits excellent low noise figure with less than 3.5 dB when the device operation frequency range of 18 GHz to 50 GHz.
Study of Thick Copper Metallization with WNx as Diffusion Barrier for AlGaN/GaN HEMTs
(2019-01-01)
Lin, Y. C.
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Lee, M. W.
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Tsai, M. Y.
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Wang, C.
;
Yao, J. N.
In this study, the thick copper metallization with WNx as diffusion barrier is investigated for AlGaN/GaN HEMTs. The device current density, transconductance, ft, fmax, noise figure were evaluated for the device with and without thick copper interconnect metal, and the thermal stability test was performed after the device with copper metallization.