Browsing by Author "Huang, TJ"

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Electroless plating with Pd induced crystallization of amorphous silicon thin films
(2002-11-01)
Hu, GR
;
Wu, YCS
;
Chao, CW
;
Huang, TJ
;
材料科學與工程學系
A metal-induced crystallization method can be used to decrease the crystallization temperature of amorphous silicon (a-Si). In this study, Pd metal was deposited by an electroless plating method. After it was annealed at 550degreesC, two kinds of needlelike grains were found. The direction of the primary grain was along <211> and the growth of the secondary grain occurred along the <011> direction.
Improved annealing process for electroless Pd plating induced crystallization of amorphous silicon
(2003-08-01)
Hu, GR
;
Huang, TJ
;
Wu, YS
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Electroless Pd plating induced crystallization of amorphous silicon (a-Si) thin films has been proposed for fabricating low-temperature polycrystalline silicon thin film transistors (LTPS TFTs). However, the current crystallization process often leads to poor device performance due to the large amount of I'd-silicide residues in the poly-Si thin films. It was found that the amount of I'd silicide increased with annealing time and temperature. In this study, a two-step annealing process was developed to obtain the appropriate amount of Pd silicide for inducing the crystallization of a-Si. The device characteristics were significantly improved by this two-step process.