Browsing by Author "Huang, Tai-Yuen"

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Controllable oxygen vacancies to enhance resistive switching performance in a ZrO(2)-based RRAM with embedded Mo layer
(2010-12-10)
Wang, Sheng-Yu
;
Lee, Dai-Ying
;
Huang, Tai-Yuen
;
Wu, Jia-Woei
;
Tseng, Tseung-Yuen
In this study, the resistive switching characteristics of a ZrO(2)-based memory film with an embedded Mo layer are investigated. The experimental results show that the forming process can be removed by inserting an embedded Mo metal layer within ZrO(2) via a post-annealing process. The excellent memory performance, which includes lower operation voltage (<1.5 V), good endurance (>10(3) cycles), a stubborn nondestructive readout property (>10(4) s), and long retention time (>10(7) s), is also demonstrated. Moreover, high-speed operation (10 ns) can be successively maintained over 10(3) cycles without any operational errors observed in this memory device. Due to the interface layer induced by the Ti top electrode, the formation and rupture of conducting filaments are suggested to occur near the Ti/ZrO(2) interface. The oxygen vacancies induced by the embedded Mo can enhance the formation of conducting filaments and further improve the switching characteristics in ZrO(2)-based devices.
Controllable oxygen vacancies to enhance resistive switching performance in a ZrO2-based RRAM with embedded Mo layer
(2010-12-10)
Wang, Sheng-Yu
;
Lee, Dai-Ying
;
Huang, Tai-Yuen
;
Wu, Jia-Woei
;
Tseng, Tseung-Yuen
In this study, the resistive switching characteristics of a ZrO2-based memory film with an embedded Mo layer are investigated. The experimental results show that the forming process can be removed by inserting an embedded Mo metal layer within ZrO2 via a post-annealing process. The excellent memory performance, which includes lower operation voltage (<1.5 V), good endurance (>10(3) cycles), a stubborn nondestructive readout property (>10(4) s), and long retention time (>10(7) s), is also demonstrated. Moreover, high-speed operation (10 ns) can be successively maintained over 10(3) cycles without any operational errors observed in this memory device. Due to the interface layer induced by the Ti top electrode, the formation and rupture of conducting filaments are suggested to occur near the Ti/ZrO2 interface. The oxygen vacancies induced by the embedded Mo can enhance the formation of conducting filaments and further improve the switching characteristics in ZrO2-based devices.
Unipolar Resistive Switching in ZrO2 Thin Films
(2013-04-01)
Zhang, Guo-Yong
;
Lee, Dai-Ying
;
Yao, I-Chuan
;
Hung, Chung-Jung
;
Wang, Sheng-Yu
Unipolar resistive switching behaviors including bistable memory switching and monostable threshold switching were found in ZrO2 thin films fabricated by a simple sol-gel method with the Ti/ZrO2/Pt structure. The multilevel resistive switching behaviors were also revealed by varying the compliance current from 9 to 38 mA. Physical mechanisms based on a conductive filament model were proposed to explain the resistive switching phenomena and the device breakdown. A figure of merit Z = rho(a)/rho(f) was defined as a criterion for evaluating OFF/ON resistance ratio, where rho(f) and rho(a) represent the resistivities of the conductive filament and the fracture region of the filament, respectively. The advantages such as unipolar resistive switching, multilevel resistive switching, good scalability, low operation voltage (<5 V), high OFF/ON resistance ratio (>10(3)), nondestructive readout, long retention (>10(4) s), and simple fabrication method make the ZrO2-based resistive switching device a promising candidate for next-generation nonvolatile memory applications. (C) 2013 The Japan Society of Applied Physics