Browsing by Author "Huang, Ting-Jui"

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A Compact Dual-band Antenna at Ka-band Frequencies for Next Generation Cellular Applications
(2018-01-01)
Huang, Ting-Jui
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Hsu, Heng-Tung
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Chou, Hsi-Tseng
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交大名義發表
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電子工程學系及電子研究所
This paper presents a new design of a compactsized dual -band antenna operating at 28 GHz and 38 GHz for 5G cellular applications. Based on the slot-coupled patch configuration, the antenna exhibited a good impedance matching with reasonable gain of 5.5/6.5 dBi at 28/38 GHz within the band of interest. The measured total radiation efficiency of the antenna was 88.9%/83.7% at 28/38 GHz.
A New Design of Wilkinson Power Divider Using Radial Stubs Featuring Size Reduction and Bandwidth Enhancement with Physical Isolation
(2017-01-01)
Chang, Tso-Jung
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Huang, Ting-Jui
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Hsu, Heng-Tung
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國際半導體學院
;
International College of Semiconductor Technology
In this paper, we present a new design of a compact power divider based on the modification of the conventional Wilkinson power divider. In this new configuration, length reduction of the high-impedance arms is achieved through capacitive loading using open stubs. Radial configuration was adopted for bandwidth enhancement. Additionally, by insertion of the complex isolation network between the high-impedance transmission lines at an arbitrary phase angle other than 90 degrees, both electrical and physical isolation were achieved. Design equations as well as the synthesis procedure of the isolation network are demonstrated using an example centred at 1 GHz. The measurement results revealed a reduction of 60% in electrical length compared to the conventional Wilkinson power divider with a total length of only 30 degrees at the centre frequency of operation.
Communication-Potential of the pi-Gate InAs HEMTs for High-Speed and Low-Power Logic Applications
(2019-06-07)
Yao, Jing-Neng
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Lin, Yueh-Chin
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Wong, Ying-Chieh
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Huang, Ting-Jui
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Hsu, Heng-Tung
Composite channel (In0.65Ga0.35As/InAs/In0.65Ga0.35As) high electron mobility transistors (HEMTs) with pi-gate structure were investigated for high-speed and low-power logic applications. The conventional and tri-gate MESA HEMTs were compared with the pi-gate device for evaluation. The pi-gate device exhibited the best maximum transconductance value of 1584 mS/mm, on-state current of 332mA/mm, subthreshold swing (SS) of 78.1 mV/decade, and I-ON/I-OFF ratio of 3 x 10(4) at V-DS = 0.5 V at room temperature. These results indicated that the designed pi-gate InAs devices improve the electrical characteristics of InAs HEMTs for high-speed and low-power logic applications. (c) 2019 The Electrochemical Society.
Effect of AlN Spacer on the AlGaN/GaN HEMT Device Performance at Millimeter-wave Frequencies
(2018-01-01)
Wang, Chun
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Hsu, Heng-Tung
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Huang, Ting-Jui
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Fan, Jun-Kai
;
Chang, Edward Yi
The effect of the AlN spacer on the performance of AlGaN/GaN HEMT devices at 38 GHz is experimentally investigated. The measurement results revealed that the device with spacer showed superior performance in terms of the maximum drain current. RF wise, substantial improvement in the cut-off frequency and the maximum oscillation frequency was also observed for devices with spacer. A saturated output power density of 4.21 W/mm with 35.02% power-added efficiency (PAE) at 38 GHz were achieved for device with 70nm gate length.
Ka-band Antipodal Dual Exponentially Tapered Slot Antenna for Next Generation Mobile Communication System Applications
(2017-01-01)
Hsu, Heng-Tung
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Huang, Ting-Jui
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Tsao, Yi-Fang
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國際半導體學院
;
International College of Semiconductor Technology
In this paper, the design, simulation and measurement of a planar antenna at Ka-band targeted for 5th-generation mobile terminal application are presented. Based on tapered-slot configuration, this antenna exhibited an input return loss of greater than 10 dB covering entire Ka-band from 26.5 GHz to 40 GHz. The measured gain was 5 dBi at 28 GHz and 7.9 dBi at 38 GHz. Gain enhancement was achieved through elliptic-shaped dielectric loading in the direction of radiation. A 2-dB improvement in gain at 28 GHz and 38 GHz was obtained. The proposed antenna configuration can easily be realized using standard printed-circuit-board (PCB) process for the ease of integration with other planar circuitry, suitable for applications of the next generation mobile terminals at millimeter-wave frequencies.
Miniaturized Wilkinson Power Divider with Complex Isolation Network for Physical Isolation
(2017-01-01)
Chang, Tso-Jung
;
Huang, Ting-Jui
;
Hsu, Heng-Tung
;
國際半導體學院
;
International College of Semiconductor Technology
In this paper, we present a new design of a compact power divider based on the modification of the conventional Wilkinson power divider. In addition to the external capacitive loading to shorten the quarter-wave high impedance lines, a complex isolation network is introduced to improve the physical isolation while maintaining the electrical one. Design equations as well as the synthesis procedure of the isolation network are demonstrated using an example centred at 1 GHz. We have achieved a reduction of 57% in the overall area as compared to the conventional Wilkinson power divider configuration using the proposed approach. The measured results agreed reasonably well with the theoretical synthesis responses.
Planar Diplexer Design Using Hairpin Resonators Loaded with External Capacitors for Improvement of Isolation and Stopband Rejection Levels
(2019-01-01)
Tsao, Yi-Fan
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Huang, Ting-Jui
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Hsu, Heng-Tung
;
Wu, Chia-Wei
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交大名義發表
We have successfully demonstrated the design and implementation of a planar diplexer operating at 900MHz and 1800MHz intended for cellular system applications. Using hairpin resonators loaded with external capacitors, we managed to obtain 40% size reduction compared to the ones without external loading with substantial improvement in the band-to-band isolation.
Single-pole Double-throw Switch Using Stacked-FET Configuration at Millimeter Wave Frequencies
(2018-01-01)
Mei, Peng-, I
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Wu, Guan-Wei
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Hsu, Heng-Shou
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Huang, Ting-Jui
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Tsao, Yi-Fan
In this paper, we present single-pole double-throw (SPDT) switch at Ka-band for phased array front-end applications. The proposed switch composed of three shunt arms and a quarter-wave length impedance transformer in series on each branch. The stacked-FET configuration was adopted to enhance the power handling capability. Implemented with 0.15um GaAs pHEMT technology by WIN Semiconductor, the overall chip size was 2 mm by 1 mm. The measured insertion loss was less than 3 dB with better than 25 dB isolation from 15 GHz to 35 GHz. The proposed configuration also featured an input 1 dB compression point of 26 dBm.