Browsing by Author "Huang, Tzu-Wei"

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Improving Golf Swing Skills Using Intelligent Glasses
(2015-01-01)
Chen, Hua-Tsung
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Huang, Tzu-Wei
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Chou, Chien-Li
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Tsai, Hou-Chun
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Lee, Suh-Yin
Since a proficient golf swing is a key element in success in golf, golfers always make much effort in improving their swing skills. However, if not under the supervision of a coach, a golfer cannot effectively perceive his/her faults in swings and comprehend how to change the swing mechanics. In this paper, we propose a vision-based golf training system, named "Improve My Golf Swing," which aims at improving the golfer's swing skills using intelligent glasses serving as a wearable displayer. The golfer's posture is analyzed through computation-efficient image processing techniques. Involving professional golf training knowledge, the proposed system automatically generates feature lines to evaluate whether the golfer's body is properly aligned. During a swing, the golfer can watch his/her own posture as well as the augmented feature lines displayed on the intelligent glasses. Instead of quantitative swing analysis, we focus on providing instructions of posture adjustment to the golfer in a more intuitive and unambiguous manner. Different audio alerts will be given to the golfer according to which part of a posture fault is detected. Experiments on different golf swing videos show encouraging results.
Influences of the backbone randomness on the properties, morphology and performances of the fluorinated benzoselenadiazole-benzothiadiazole based random copolymers
(2015-01-01)
Chen, Yung-Tsung
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Huang, Tzu-Wei
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Wang, Chien-Lung
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Hsu, Chain-Shu
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應用化學系
To investigate the influences of the 5,6-difluoro-benzoselenadiazole : 5,6-difluoro-benzothiadiazole (FBSe : FBT) ratio on the polymer properties, solid-state morphology and device performances, a series of FBSe : FBT based copolymers were synthesized. Copolymers with higher FBSe ratios were found to have narrower E-g, and higher-lying E-HOMO. Because of the size and electronegativity differences of the selenium and sulfur atoms, the FBSe : FBT ratio further affects the structural regularity of the conjugated chains, and their self-assembly behaviors. DSC results indicated that P1, which has the most irregular FBSe : FBT sequence along the backbone showed the lowest T-m. Interestingly, XRD results showed that the main-chain irregularity degrades the order of the lamellar stacking, but not the order of p-stacking. The random ternary copolymers, P1 and P2, possess more ordered pi-stacking than the alternating copolymers, PTh4FBSe and PTh4FBT. The highest OFET mu h of 0.46 cm(2) V-1 s(-1) was delivered by P1, which has the smallest d(pi-pi) among the copolymers. In the polymer : PC71BM blend films, the FBSe containing copolymers have good miscibility in PC71BM. The degree of phase separation of PTh4FBSe : PC71BM can be enhanced by DIO additive, but it is not effective for the random ternary copolymers. The highest PCE of 6.06% with V-oc of 0.64 V, J(sc) of 15.3 mA cm(-2), and FF of 61.8% was delivered by the PTh4FBSe : PC71BM PSCs.
Thiophene and diketopyrrolopyrrole based conjugated polymers as efficient alternatives to spiro-OMeTAD in perovskite solar cells as hole transporting layers
(2017-06-07)
Peng, Shih-Hao
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Huang, Tzu-Wei
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Gollavelli, Ganesh
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Hsu, Chain-Shu
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應用化學系
Poly[(5,5 '-bis(3-dodecyl-2-thienyl)-2,2 '-bithiophene)] (PQT), poly-(2,5-bis(3-alkylthiophene-2-yl)thieno-[3,2-b]thiophene) (PBTTT), poly{2,2 '-[(2,5-bis(2-octyldodecyl)-3,6-dioxo-2,3,5,6-tetrahydropyrrolo[3,4-c]pyrrole-1,4-diyl)]dithiophene-5,5 '-diyl-alt-2,2 '-bithiophene-5,5 '-diyl} (PDQT) and poly{2,2 '-[(2,5-bis(2-octyldodecyl)-3,6-dioxo-2,3,5,6-tetrahydropyrrolo[3,4-c]pyrrole-1,4-diyl)]dithiophene-5,5 '-diyl-alt-thieno-[3,2-b]thiophene-2,5-diyl} (PDBT-co-TT) were used to replace spiro-OMeTAD as efficient hole transporting layers (HTLs) in perovskite solar cells (PSCs). We demonstrated that both the hole mobility and suitable energy levels of these polymers are important factors in PSCs using organic field-effect transistors (OTFTs) and cyclic voltammetry analysis. The doping effect and the hydrophobic properties of the HTLs were investigated using atomic force microscopy (AFM) and water contact angle measurements. The results show that the PBTTT-14 and PDBT-co-TT based PSCs showed the best PCE of 14.1% and 12.0%, respectively when compared with spiro-OMeTAD based PSCs which have a PCE of 10.2%.
Transferring the bendable substrateless GaN LED grown on a thin C-rich SiC buffer layer to flexible dielectric and metallic plates
(2017-01-21)
Cheng, Chih-Hsien
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Huang, Tzu-Wei
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Wu, Chung-Lun
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Chen, Mu Ku
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Chu, Cheng Hung
By growing an epitaxial GaN LED on C-rich a-SiC buffer deposited SiO2/Si substrate, the simplified transfer to versatile flexible metallic/dielectric membranes is demonstrated. Both the high growth temperature at 1000 degrees C and the slow deposition rate played important roles in the meticulous MOCVD growth of n-GaN along the surface normal of the a-SiC at the very beginning. High substrate temperature facilitated the refinement of C-rich SiC buffer from amorphous to partially crystalline with (0004)-orientation, which effectively reduces the lattice mismatch between n-GaN and SiC at the interface so as to gradually improve the crystalline n-GaN regrowth. The substrateless GaN LED transferred to flexible copper plates showed reduced turn-on voltage of 2.6 V, enhanced output power of 370 mW, enlarged power-to-current slope of 1.24 W A(-1), increased external quantum efficiency of 45%, and reduced efficiency droop of 15% under a bias of 300 mA. The thermal conductivity of the transferred substrate affected the EL peak wavelength shift of the substrateless GaN LED on SiC buffer. Heating the GaN LED on flexible copper plate to 65 degrees C only reduced its power by 10% and red-shifted its wavelength by 1 nm under a bias at 100 mA; the Auger effect resulted in a degraded EQE of 39.1% and an enlarged EQE droop of 8.5%. Bending the surface diameter of the curvature of the copper plate to 1.2 cm decayed the output power by 12% and red-shifted the EL peak by 5 nm because of the lattice strain induced quantum confined Stark effect (QCSE). Such a bendable substrateless GaN LED transferred to flexible membrane with superior heat dissipation and bending tolerance is a desired lighting element for green photonics in this era.