Browsing by Author "Huang, W. -H."

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A high-performance laser energy meter based on anisotropic Seebeck effect in a strongly correlated electronic thin film
(2013-11-01)
Zhang, G. -Y.
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Zheng, H. -R.
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Huang, W. -H.
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Zhang, X. -Y.
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Gao, D. -L.
We have developed a high-performance laser energy meter based on anisotropic Seebeck effect in a strongly correlated electronic (SCE) thin film. SCE thin films, typically represented by high-temperature superconductor (HTS) cuprate and colossal magnetoresistance (CMR) manganite thin films, demonstrate tremendous anisotropic Seebeck effect. In this study, a La2/3Ca1/3MnO3 thin film grown on a tilted LaAlO3 substrate is tested with the fundamental, the second, the third, and the fourth harmonics (1064, 532, 355, 266 nm, respectively) of a Q-switched Nd:YAG laser over a wide range of temperatures from room temperature to 16 K. The peak-value of the laser-induced thermoelectric voltage signal shows a good linear relationship with the laser energy per pulse in the measured wavelength and temperature ranges. The combined advantages over other commercial laser detectors such as nanosecond-order response and spectrally broad and flat response over a wide range of temperatures, in situ real-time measurement, and energy savings, make the device an ideal candidate for next-generation laser detectors and laser power/energy meters.
A Novel Junctionless FinFET Structure with Sub-5nm Shell Doping Profile by Molecular Monolayer Doping and Microwave Annealing
(2014)
Lee, Y. -J.
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Cho, T. -C.
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Kao, K. -H.
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Sung, P. -J.
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Hsueh, F. -K.
For the first time, a novel junctionless (JL) FinFET structure with a shell doping profile (SDP) formed by molecular monolayer doping (MLD) method and microwave annealing (MWA) at low temperature is proposed and studied. Thanks to the ultra thin SDP leading to an easily-depleted channel, the proposed JLFinFET can retain the ideal subthreshold swing (similar to 60 mV/dec) at a high doping level according to simulations. Poly Si based JLFinFETs processed with MLD and MWA exhibit superior subthreshold swing (S.S. similar to 67mV/dec) and excellent on-off ratio (>10(6)) for both n and p channel devices. Threshold voltage (V-TH) variation due to random dopant fluctuation (RDF) is reduced in MLD-JLFinFETs, which can be attributed to the molecule self-limiting property of MLD on the Si surface and quasi-diffusionless MWA at low temperature. Our results reveal the potential of the proposed SDP enabling a JLFET showing reduced variation and outstanding performance for low power applications.
High Performance Complementary Ge Peaking FinFETs by Room Temperature Neutral Beam Oxidation for Sub-7 nm Technology Node Applications
(2016-01-01)
Lee, Y. -J.
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Hong, T. -C.
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Hsueh, F. -K.
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Sung, P. J.
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Chen, C. -Y.
Ge peaking n- and p-FinFETs have been demonstrated by adopting neutral beam etching (NBE) and anisotropic neutral beam oxidation (NBO) processes. The irradiation-free NB processes not only suppress surface roughness but also guarantee low defect generation on the etched Ge surface. The fabricated Ge peaking FinFETs possess several unique features: (1) A peaking fin configuration with a 6-nm top-gate formed by an anisotropic NBO process at room temperature. (2) Nearly defect-free three dimensional channel surfaces by NB processes. (3) ION and Gm improvement by NB processes as compared to that by conventional inductively coupled plasma etching (ICP). (4) Recorded high I-ON/I-OFF ratio and low subthreshold swing (S.S. similar to 70 mV/dec.) of Ge n-FinFETs. (5) Excellent immunity for short channel effect of Ge FinFETs.