Browsing by Author "Huang, WC"

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A spatial and temporal bi-criteria parallel-savings-based heuristic algorithm for solving vehicle routing problems with time windows
(1997)
Tzeng, GH
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Huang, WC
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Teodorovic, D
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運輸與物流管理系註：原交通所+運管所
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Department of Transportation and Logistics Management
This paper proposes a spatial and temporal bi-criteria parallel-savings-based heuristic algorithm for solving vehicle-routing problems with time windows. The purpose of the algorithm is to reduce transportation costs and to satisfy the specific times, within time windows, which are required by customers. For evaluating the performance of the algorithm, two separate sets of time windows are created by generating data randomly. The test results reveal that both the preciseness and stability of the solutions perform much better than those based on the insertion method.
AuGePt ohmic contact to n-type InP
(1996-06-15)
Huang, WC
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Lee, CL
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
This work studied the AuGe to n-InP/ohmic contact system with the addition of Pt. It studied two contact schemes, i.e., Au/Ge/Pt/n-InP and Au/Pt/Au/Ge/n-InP. The specific contact resistances, the thermal stability, as well as the microstructure of the system, were systematically studied with the aid of scanning electron microscopy, Auger electron spectroscopy, Rutherford backscattering analysis, and x-ray diffraction. The processing condition to achieve the optimum contact resistance was also sought and it was found that a specific contact resistance of 2.15x10(-6) Ohm cm(2) could be obtained if the Au/Ge/Pt/n-InP contact system was rapid thermal annealed at 550 degrees C for 30 s. The system was also found to be able to achieve low specific contact resistances for a wide range of anneal temperature from 400 to 550 degrees C. It was found that the Pt existence in-between AuGe and InP improved the surface morphology, the contact interface uniformity, and the thermal stability. The system could withstand a thermal aging at 400 degrees C for 80 h with only a minimal increase on the specific contact resistance. (C) 1996 American Institute of Physics.
AuGePt ohmic contact to n-type InP
(1996-06-15)
Huang, WC
;
Lee, CL
;
電子工程學系及電子研究所
;
電控工程研究所
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Department of Electronics Engineering and Institute of Electronics
This work studied the AuGe to n-InP/ohmic contact system with the addition of Pt. It studied two contact schemes, i.e., Au/Ge/Pt/n-InP and Au/Pt/Au/Ge/n-InP. The specific contact resistances, the thermal stability, as well as the microstructure of the system, were systematically studied with the aid of scanning electron microscopy, Auger electron spectroscopy, Rutherford backscattering analysis, and x-ray diffraction. The processing condition to achieve the optimum contact resistance was also sought and it was found that a specific contact resistance of 2.15x10(-6) Ohm cm(2) could be obtained if the Au/Ge/Pt/n-InP contact system was rapid thermal annealed at 550 degrees C for 30 s. The system was also found to be able to achieve low specific contact resistances for a wide range of anneal temperature from 400 to 550 degrees C. It was found that the Pt existence in-between AuGe and InP improved the surface morphology, the contact interface uniformity, and the thermal stability. The system could withstand a thermal aging at 400 degrees C for 80 h with only a minimal increase on the specific contact resistance. (C) 1996 American Institute of Physics.
Effects of BCl3 passivation on Pt/Al/n-InP diodes
(2003-01-01)
Huang, WC
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Lei, TF
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Lee, CL
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
High performance Schottky diodes formed with a BCl3 passivation layer on Pl/Al/n-InP are presented. The diode realizes a barrier height as high as 0.85 eV, and the reverse current density is 1.44 x 10(-6) A/cm(2) at -3 V. Secondary ion mass spectroscopy for depth profiles measurements reveals the existence of B and Cl elements at the contact interface. The electron spectroscopy chemical analysis shows that the surface layer of the passivated InP substrate is composed of InPO4 and chloride. The improvement of the barrier height of Pt/Al/n-InP diode is presumably due to the formation of the aluminum oxide at the contact interface and due to the chlorine passivation on the interface states.
Effects of bromine-methanol and hydrogen chloride pretreatments on Pt/Al/n-InP diodes
(1997-02-01)
Huang, WC
;
Lei, TF
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Lee, CL
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電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
This paper reports the passivation effects of bromine-methanol (Br/M) and hydrogen chloride (HCl) treatments on the n-InP surface to form Pt/Al/n-InP diodes. It was found that Br/M and HCl passivated the n-InP surface. The Br/M-dipped and the HCl-dipped Pt/Al/n-InP diodes exhibited a barrier height of 0.83 and 0.86 eV, respectively, and a low reverse leakage current of 7.07 x 10(-7) and 1.10 x 10(-7) A/cm(2) at -3 V, respectively. The secondary ion mass spectroscopy and electron spectroscopy for chemical analysis showed that the Br/M or HCl treatment made formation of bromides and chlorides on the n-InP surface, respectively. They also revealed the existence of Al2O3, which is believed to be formed with the native In2O3 during the Al evaporation. This, which made the diodes be of the metal-insulator-semiconductor structure, in conjunction with the passivation effect of bromides and chlorides, improved the diode characteristics and produced the high barrier heights.
Electrical properties of GaSe doped with Er
(2004-08-01)
Hsu, YK
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Chang, CS
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Huang, WC
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光電工程學系
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Department of Photonics
Measurements of the Hall effect and Er-related luminescence were made on Er-doped GaSe. Deep-level transient spectroscopy (DLTS) was also performed. Hall measurements show that hole concentrations of 0.2%, 0.5%, and 1% Er-doped GaSe samples are 1.5x10(17)-6x10(17) cm(-3) at room temperature, and that the mobility of these holes is in the range 22-34 cm(2)/V s. The temperature dependence of the hole concentration is explained using the two-acceptor model, in which one acceptor level is at around 65 meV above the valence band and the other one is at similar to158 meV. The DLTS measurements yield similar results. Furthermore, the shallow acceptor impurities contribute free hole carriers and act as radiative centers; the deep acceptor impurities are nonradiative centers, which are responsible for the quenching behavior of Er-related luminescence. The temperature dependence of the hole mobility can be understood as the combined scatterings of homopolar optical phonons and ionized impurities. (C) 2004 American Institute of Physics.