Browsing by Author "Huang, Y. H."

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Improvement of luminescence from Si nanocrystals with thermal annealing in CO2
(2008-01-15)
Yang, M. D.
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Chu, A. H. M.
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Shen, J. L.
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Huang, Y. H.
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Yang, T. N.
Photoluminescence (PL) of Si nanocrystals with annealing in CO2 was studied using the continuous and time-resolved PL measurements. The PL intensity enhances as annealing temperature increases, which is attributed to passivation of the nonradiative recombination centers. As the annealing temperature is 950 degrees C the PL intensity has a maximum value, which increases about a factor of 3 than that of the untreated sample. Based on the emission energy dependence of the PL decay time, the depth of carrier localization is found to increase after the annealing in CO2. We suggest that the oxygen atoms desorbed from CO2 diffuse to react with Si nanocrystals and introduce localized states at the Si/SiO2 interface. (C) 2007 Elsevier B.V. All rights reserved.
Photoluminescence studies of InAs/GaAs quantum dots covered by InGaAs layers
(2010-01-15)
Shu, G. W.
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Wang, J. S.
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Shen, J. L.
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Hsiao, R. S.
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Chen, J. F.
Photoluminescence (PL), PL excitation (PLE), and time-resolved PL were used to study effects of InGaAs layers on the optical properties of InAs/GaAs quantum dots (QDs). A rich fine structure in the excited states of confined excitons (up to n = 4 quantum states) was observed, providing useful information to study the quantum states in the InAs/GaAs QDs. A significant redshift of the PL peak energy for the QDs covered by InGaAs layers was observed, attributing to the decrease of the QD strain and the lowing of the quantum confinement. (C) 2009 Elsevier B.V. All rights reserved.
Single-photon avalanche diodes in 0.18-mu m high-voltage CMOS technology
(2017-06-12)
Huang, L. D.
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Wu, J. Y.
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Wang, J. P.
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Tsai, C. M.
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Huang, Y. H.
We have designed and fabricated high-performance single-photon avalanche diodes (SPADs) by using 0.18-mu m high-voltage CMOS technology. Without any technology customization. the SPADs have low dark-count rate, high photon-detection probability, low afterpulsing probability, and acceptable timing jitter and breakdown voltage. Our design provides a low-cost and high-performance SPAD for various applications. (C) 2017 Optical Society of America