Browsing by Author "Huang, YW"

Now showing 1 - 6 of 6

A testing framework for Web application security assessment
(2005-08-05)
Huang, YW
;
Tsai, CH
;
Lin, TP
;
Huang, SK
;
Lee, DT
The rapid development phases and extremely short turnaround time of Web applications make it difficult to eliminate their vulnerabilities. Here we study how software testing techniques such as fault injection and runtime monitoring can be applied to Web applications. We implemented our proposed mechanisms in the Web Application Vulnerability and Error Scanner (WAVES)-a black-box testing framework for automated Web application security assessment. Real-world situations are used to test WAVES and to compare it with other tools. Our results show that WAVES is a feasible platform for assessing Web application security. (c) 2005 Elsevier B.V. All rights reserved.
Deployment of personalized e-catalogues: An agent-based framework integrated with XML metadata and user models
(2001-07-01)
Liu, DR
;
Lin, YJ
;
Chen, CM
;
Huang, YW
;
資訊管理與財務金融系註：原資管所+財金所
In e-commerce applications, supporting electronic catalogues (e-catalogues) to provide product-search services on the Internet is emerging as an important function of electronic brokers ( e-brokers). However, as the Internet expands, an increasing number of virtual stores are selling products on-line. The explosive growth of information is creating difficulties for customers searching for the product information they desire. In this work, an integrated framework is proposed to develop personalized e-catalogues. The proposed framework integrates XML-based metadata models, user models and agents. The XML-based metadata model can facilitate resource-discovery and format translation, and can flexibly model the definitions of diverse product attributes in heterogeneous data resources. The proposed user model can model a user's shopping interests to resources, categories and products. This work integrates the agent technology with the proposed metadata model and user model to develop a personalized e-catalogue system. The novel system effectively provides an integrated search for heterogeneous product information, as well as supporting personalized product search and browsing for each user based upon their profiles. (C) 2001 Academic Press.
Impedance behavior of spin-valve transistor
(2006-04-15)
Peng, TY
;
Chen, SY
;
Hsieh, LC
;
Lo, CK
;
Huang, YW
The magnetoimpedance (MZ) effect of the pseudo-spin-valve transistor (PSVT) was investigated at room temperature in the frequency ranged from 100 Hz to 15 MHz. The PSVT can be regarded as a complex combination of resistors, inductors, and capacitors, while the impedance (Z) consists of a real part, the resistance (R), and an imaginary part, the reactance (X). Besides, all these components exhibit magnetic hysteresis. It is due to the frequency dependent behavior that R does not reach a minimum at the resonant frequency (f(r)). The frequency dependences of MZ and MX ratios cross zero at f(x)=6.5 MHz and at f(r)=3.65 MHz, respectively. The shape of magnetoreactance (MX) loop is reverse to the magnetoresistance (MR) loop; furthermore, MX ratio changes sign from negative at f < f(r) to positive at f>f(r). The MZ loop also reverses shape and sign after crossing f(x). For instance, the MZ loop with a ratio of 0.077% at 6 MHz switches to -0.086% and -0.125% at 7 and 8 MHz, respectively. (C) 2006 American Institute of Physics.
Magnetic domain pinning in lithographically patterned amorphous magnetic layer
(1999-03-01)
Wu, JC
;
Huang, YW
;
Chen, BM
;
Wu, TH
;
Shieh, HPD
Artificial pinning sites have been fabricated for the magnetic domain pinning in perpendicular anisotropy magneto-optical (MO) thin film media. The pinning sites were radial hole array made by patterning a layer of radial gold grid on the silicon nitride (SiN) coated silicon (Si) substrate using a standard electron beam lithography. Various magnetization and demagnetization procedures were performed to investigate the magnetic domain pinning behavior. A polar Kerr microscope was used in situ to monitor the magnetic wall motion and a magnetic force microscope was employed to scan the magnetic domain structures. Magnetic domains were found to be pinned inside the hole array and resembled to the geometric shape of the holes. The coercivity in the patterned MO layer is much higher than in thr unpatterned MO layer. Moreover, the coercivity in the larger pinning sites area is higher than in the smaller pinning sites area.
Magnetic domain pinning in patterned magneto-optical material
(1999-04-15)
Wu, TH
;
Wu, JC
;
Huang, YW
;
Chen, BM
;
Schieh, HPD
Pinning magnetic domains with defined shapes have been made for magneto-optical thin film material. The pinning array of holes on the substrate was fabricated using electron beam lithography. The domain pinning behaviors were studied by applying an external magnetic field perpendicular to the film plane and imaged by atomic force microscopy in their remanent state. Magnetic domains were found to be pinned inside the hole arrays and reproduced the shapes of the holes. The coercivity in the patterned region is larger than in the nonpatterned region. Moreover, the coercivity inside the hole sites is larger than the land sites. (C) 1999 American Institute of Physics. [S0021-8979(99)38708-9].
Relaxation of pinned domains in patterned magnetic thin films
(2000-02-01)
Wu, TH
;
Wu, JC
;
Huang, YW
;
Ye, LX
;
Chen, BM
We have shown in previous papers that the magnetic domains could be pinned inside the artificially patterned hole arrays under suitable geometry aspect ratio. Nevertheless, we have found that if we reverse the magnetization directions through domain wall motion, the confined domains expand from smaller territory into larger territory for some samples. In addition, the pinned domains maintained the same moment's orientation after the domain expansion. The possible reason for the pinned domains to retain the same moment's orientation maybe those pinning holes that act as high anisotropy defects. Thus, domain wall motion was around the high anisotropy sites and only peeled away the domain in the land area while the enclosed domain of the hole area maintained the same orientation. Moreover, the feasible reason for the expansion domains is the coercive force, which is perpendicular to the side-walls and pinning the domains inside the holes, are relaxed and thus causing the domains growth. This phenomenon is called the relaxation of pinning domains. (C) 2000 Elsevier Science B.V. All rights reserved.