Browsing by Author "Huang, Yan-Pin"

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Demonstration and Electrical Performance of Cu-Cu Bonding at 150 degrees C With Pd Passivation
(2015-08-01)
Huang, Yan-Pin
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Chien, Yu-San
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Tzeng, Ruoh-Ning
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Chen, Kuan-Neng
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電子工程學系及電子研究所
In this paper, one low-temperature direct Cu bonding structure is demonstrated using metal passivated layers. With the protection of Cu bonding layer, the bonding temperature can be reduced to meet low thermal budget requirement. Direct wafer-level Cu bond scheme with Pd passivation is successfully demonstrated at 150 degrees C. Electrical performance along with the material analysis and reliability tests of passivated Cu bonded structures is presented. Furthermore, reliability assessments, including current stressing, temperature cycling, and unbiased highly accelerated stress test, imply excellent stability without electrical degradation. Diffusion behavior between passivation Pd and Cu layers is surveyed, and the corresponding mechanism is discussed as well. The low-temperature Cu/Pd-Pd/Cu bonded structure presents good bond quality and electrical performance, indicating a great potential for 3-D integration applications.
Investigation of Cu/In Thermosonic Bonding
(2017-12-01)
Huang, Yan-Pin
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Lu, Shu-Lin
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Huang, Yu-Shang
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Tseng, Yi-Hsiu
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Shu, Min-Fong
In response to the current trend of multi-functional electronic products, integrated circuits become smaller with higher I/O counts. Thermosonic bonding is a potential microelectronic stacking technology for three-dimensional (3D) integration and advanced packaging. Therefore, it is important to comprehend the relation between strength and bonding condition. In this paper, parameters of ultrasonic vibration for low temperature Cu pillar to Cu/In bonding are investigated through shear test. Moreover, electrical performance is evaluated by Kelvin structure and Daisy chain. Experiment results show that heating temperature and bonding force possess a positive correlation with shear strength, which can be up to 39 MPa. In addition, it exhibits good electrical performance in the range of 10(-8) Omega-cm(2) as well as high resistance to environmental degradation. This work provides guidelines of Cu/In thermosonic bonding for future fine pitch applications.
Low Temperature (< 180 degrees C) Bonding for 3D Integration
(2013)
Huang, Yan-Pin
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Tzeng, Ruoh-Ning
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Chien, Yu-San
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Shy, Ming-Shaw
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Lin, Teu-Hua
Three types of bonding, including Cu-In, Sn/In-Cu, and Cu/Ti-Ti/Cu, are investigated for the application of 3D interconnects. Cu-In bonding and Sn/In-Cu bonding can form intermetallic compounds at the bonding temperature lower than 180 degrees C. In addition, for Cu/Ti-Ti/Cu bonding, Cu can be protected from oxidation by capping Ti on Cu surface before bonding. This method can further decrease bonding temperature. All bonded structures have shown excellent electrical performance and reliability characteristics. Based on bond results, these structures can be applied for low temperature bonding in 3D interconnects.
Low Temperature (< 180 degrees C) Wafer-level and Chip-level In-to-Cu and Cu-to-Cu Bonding for 3D Integration
(2013)
Chien, Yu-San
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Huang, Yan-Pin
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Tzeng, Ruoh-Ning
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Shy, Ming-Shaw
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Lin, Teu-Hua
Two bonded structures, Cu/In bonding and Cu-Cu bonding with Ti passivation, were investigated for the application of 3D interconnects. For Cu/In bonding, the bonds were achieved at 170 degrees C due to the isothermal solidification. The intermetallic compounds formed in the joint was Cu2In phase. For another case, Cu-Cu bonding with Ti passivation was successfully achieved at 180 degrees C. Application of Ti passivation can protect inner Cu from oxidation; therefore, the required bonding temperature can be decreased. Compared to direct Cu-Cu bonding, Cu/In bonding and Cu-Cu bonding with Ti passivation can be performed at low temperature, which can meet low thermal budget requirement for most devices. Besides, with the good electrical performance and reliability, these two bonded interconnects can be applied for 3D IC interconnects.
Low-Temperature Bonded Cu/In Interconnect With High Thermal Stability for 3-D Integration
(2014-04-01)
Chien, Yu-San
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Huang, Yan-Pin
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Tzeng, Ruoh-Ning
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Shy, Ming-Shaw
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Lin, Teu-Hua
Low-temperature (170 degrees C) Cu/In wafer-level and chip-level bonding for good thermal budget has been successfully developed for 3-D integration applications. For the well-bonded interconnect, Cu2In and Cu7In3 phases with high melting temperature of 388.3 degrees C and 632.2 degrees C can be formed, indicating high thermal stability. In addition, stable low specific contact resistance of bonded interfaces can be achieved with the values of approximately 0.3 x 10(-8) Omega-cm(2). In addition to exceptional electrical characteristics, the results of electrical reliability assessments including current stressing, temperature cycling, and unbiased HAST show excellent stability of Cu/In bonds without obvious deterioration. The low-temperature Cu/In bonding technology presents good bond quality and electrical performance, and possesses a great potential for future applications of 3-D interconnects.
Novel Cu-to-Cu Bonding With Ti Passivation at 180 degrees C in 3-D Integration
(2013-12-01)
Huang, Yan-Pin
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Chien, Yu-San
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Tzeng, Ruoh-Ning
;
Shy, Ming-Shaw
;
Lin, Teu-Hua
A novel CMOS-compatible bond structure using Cu-to-Cu bonding with Ti passivation is demonstrated at low temperature and investigated. With the Ti protection of inner Cu, Cu bonding temperature can be reduced to 180 degrees C. In addition, excellent electrical stability against humidity and temperature cycling is achieved. Diffusion behavior and mechanism of Cu and Ti are also discussed. With excellent bond results and reliability, this bonded scheme has the potential to be applied in 3-D integration.