Browsing by Author "Huang, Yi-Chin"

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Characteristics of In0.7Ga0.3As MOS Capacitors Obtained using Hydrochloric Acid Treatment, Ammonium Sulfide Passivation, Methanol Treatment, and Forming Gas Annealing
(2019-08-14)
Chung, Sheng-Ti
;
Huang, Yi-Chin
;
Fu, Yen-Chun
;
Lee, Yao-Jen
;
Chao, Tien-Sheng
This paper proposes a chemical pre-treatment process to reduce sulfate prior to atomic layer deposition of Al2O3 gate dielectrics on n-doped In0.7Ga0.3As layers to form metal oxide semiconductor capacitors (MOSCAPs). Cleaning with methanol was done after hydrogen chloride etching and ammonium sulfide passivation. X-ray photoelectron spectroscopy performed on the sample with methanol cleaning indicated that its native oxide regrowth was effectively prevented on the sulfur-passivated In0.7Ga0.3As surface under air exposure. By analysis using atomic force microscopy of the sample cleaned using methanol, no further increase of surface roughness was observed after 5 months of air exposure. In addition, a mid-gap interface defect density (D-it) of 1.3 x 10(12) cm(-2) eV(-1) was obtained from this sample. After forming gas annealing (FGA), the D-it was improved significantly, to a value below 10(12) cm(-2) eV(-1). The obtained data indicate that the combination of chemical pre-treatment and FGA is advantageous to passivating the trap states on In0.7Ga0.3As MOSCAPs. (C) 2019 The Electrochemical Society.
Gold nanospirals
(2015-01-01)
Chang, Yu-Hsu
;
Wu, Yu-Chuan
;
Hsu, Ya-Ting
;
Huang, Shih-Hao
;
Huang, Yi-Chin
This study used a galvanic displacement reaction for aluminum-gold oxidation-reduction and added surfactants to act as capping agents to control the morphology and size of gold growth. Three surfactants, namely cetyltrimethylammonium bromide, polyvinylpyrrolidone, and poly(ethylene glycol)(12) tridecyl ether, were added to HAuCl4 (aq.) to create novel gold nanospirals (AuNSs) 200-500 nm in diameter and tens of mu m in length. Transmission electron microscopy analysis showed that the AuNSs were face-centered cubic in structure and that growths on the {111} facet were growth twins with mirror symmetry. Used as the base material for surface-enhanced Raman scattering, the structure of the trunk and dendrimers of the AuNSs create numerous hot spots, exhibiting a superior surface enhancement effect.