Browsing by Author "Huang, Yi-Ling"

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Effects of postgate dielectric treatment on germanium-based metal-oxide-semiconductor device by supercritical fluid technology
(2010-03-15)
Liu, Po-Tsun
;
Huang, Chen-Shuo
;
Huang, Yi-Ling
;
Lin, Jing-Ru
;
Cheng, Szu-Lin
Supercritical fluid (SCF) technology is employed at low temperature as a postgate dielectric treatment to improve gate SiO(2)/germanium (Ge) interface in a Ge-based metal-oxide-semiconductor (Ge-MOS) device. The SCF can transport the oxidant and penetrate the gate oxide layer for the oxidation of SiO(2)/Ge interface at 150 degrees C. A smooth interfacial GeO(2) layer between gate SiO(2) and Ge is thereby formed after SCF treatment, and the frequency dispersion of capacitance-voltage characteristics is also effectively alleviated. Furthermore, the electrical degradation of Ge-MOS after a postgate dielectric annealing at 450 degrees C can be restored to a extent similar to the initial state.