Browsing by Author "Huang, Ying-Yuan"

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DYNAMIC MAPPING OF AMPHETAMINE RESPONSE IN THE RAT BRAIN USING BOLD AND IRON TECHNIQUES
(2007-06-01)
Shih, Yen-Yu
;
Chen, You-Yin
;
Hsieh, Wen-Yuan
;
Huang, Ying-Yuan
;
Chang, Chen
Conventional blood oxygenation level dependent (BOLD) functional magnetic resonance imaging (fMRI) has been wildly used in neuroscience studies. Even though the BOLD method offers the functional information, the low signal-to-noise ratio could not provide an activated brain area accurately and the signal could not be easily inspected from the complicated neuronal interactions. In this regard, the present study aims to use an ultra-small super-paramagnetic iron oxide (USPIO) nanoparticle coated with covalently bound bifunctional poly(ethylene glycol) polymers to enhance the brain functional responses by the IRON (increased relaxation with iron oxide nanoparticles) technique. The R1 and R2 of this USPIO were 53.6 mMsec-1 and 359.8mMsec-1, respectively, and both were higher than most of the commercial products under 0.47 T nuclear magnetic resonance measurement. In this study, the time activity curves in responsive brain areas were evaluated following USPIO injection (3 mg of Fe/kg). The amphetamine (2 mg/kg) was used as a functional stimulator to reveal the changes of relative cerebral blood volume in different brain areas. All imaging experiments were performed by Bruker Biospec BMT 47/40 4.7 T MRI system. The results show that, compared to the BOLD signals; significant event related responses were observed in striatum, insular cortex, nucleus accumbens, somatosensory cortices, and lateral thalamus using the IRON technique. Furthermore, the usability of this USPIO in detecting rCBV responses was confirmed by comparing with previous researches.
Investigation of light absorption properties and acceptance angles of nanopatterned GZO/a-Si/p(+)-Si photodiodes
(2010-05-28)
Chen, Cheng-Pin
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Lin, Pei-Hsuan
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Hung, Yen-Jen
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Hsu, Shao-Shun
;
Chen, Liang-Yi
In this work, n-GZO/a:amorphous-Si(i:intrinsic)/p(+)-Si photodiodes are fabricated. We employed a nanosphere lithographic technique to obtain nanoscale patterns on either the a-Si(i) or p(+)-Si surface. As compared with the planar n-GZO/p(+)-Si diode, the devices with nanopatterned a-Si(i) and nanopatterned p(+)-Si substrates show a 32% and 36.2% enhancement of photoresponsivity. Furthermore, the acceptance angle measurement reveals that the nanostructured photodiodes have larger acceptance angles than the planar structure. It also shows that the device with the nanocone structure has a higher acceptance angle than that with the nanorod structure.
Investigation of low-temperature electroluminescence of InGaN/GaN based nanorod light emitting arrays
(2011-01-28)
Huang, Ying-Yuan
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Chen, Liang-Yi
;
Chang, Chun-Hsiang
;
Sun, Yu-Hsuan
;
Cheng, Yun-Wei
For InGaN/GaN based nanorod devices using a top-down etching process, the optical output power is affected by non-radiative recombination due to sidewall defects (which decrease light output efficiency) and the mitigated quantum confined Stark effect (QCSE) due to strain relaxation (which increases internal quantum efficiency). Therefore, the exploration of low-temperature optical behaviors of nanorod light emitting diodes (LEDs) will help identify the correlation between these two factors. In this work, low-temperature electroluminescent (EL) spectra of InGaN/GaN nanorod arrays were explored and compared with those of planar LEDs. The nanorod LED exhibits a much higher optical output percentage increase when the temperature decreases. The increase is mainly attributed to the increased carriers in the quantum wells for radiative recombination. Also, due to a better spatial overlap of electrons and holes in the quantum wells, the increased number of carriers can be more efficiently recombined in the nanorod device. Next, while the nanorod array shows nearly constant peak energy in the EL spectra at various injection currents at the temperature of 300 K, a blue shift has been observed at 190 K. The results suggest that with less non-radiative recombination and thus more carriers in the quantum wells, carrier screening and band filling still prevail in the partially strain relaxed nanorods. Moreover, when the temperature drops to 77 K, the blue shift of both nanorod and planar devices disappears and the optical output power decreases since there are fewer carriers in the quantum wells for radiative recombination.