Browsing by Author "Huang, Yu"

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Controlled large strain of Ni silicide/Si/Ni silicide nanowire heterostructures and their electron transport properties
(2010-11-15)
Wu, W. W.
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Lu, K. C.
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Chen, K. N.
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Yeh, P. H.
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Wang, C. W.
Unusually large and compressively strained Si in nanoheterostructures of Ni silicide/Si/Ni silicide, in which the strain of the Si region can be achieved up to 10%, has been produced with point contact reactions between Si and Ni nanowires in an ultrahigh vacuum transmission electron microscope. The growth rate and relationships between the strain and the spacing of the Si region have been measured. Based on the rate and relationships, we can control the Si dimension and, in turn, the strain of remaining Si can be tuned with appropriate spacing. Since one-dimensional nanoheterostructures may have potential applications in nanoelectronic devices, the existent strain will further affect carrier mobility and piezoresistance coefficients in the Si region. Electrical measurements on the nanodevices from such nanoheterostructures show that the current output closely correlates with the Si channel length and compressive strain. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3515421]
Efficient Multi-Destinations Route Planning with Deadlines and Cost Constraints
(2017-01-01)
Huang, Yu
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Tseng, Vincent S.
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Lin, Bo-Hau
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資訊工程學系
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Department of Computer Science
In recent years, multi-destinations route planning has been the topic of much research, which is an emerging branch of the route planning problem. The existing works have been focusing on how to find routes that minimize a single kind of trip cost, such as trip time or distance, amongst others. In fact, users may have multiple requirements in real-life multi-destinations route planning applications, including for personal or business purposes (e.g., express delivery). We observed the fact that (i) there may exist a respective deadline in reaching each of the destinations, (ii) users may consider to reduce further kinds of trip costs, such as fuel, in addition to the deadline constraint. In this paper, we address a novel route planning problem named Multi-Destinations Route Planning with Deadlines and Cost Constraints and propose two approaches, namely BMDC (Basic Multi-Destinations Route Computation) and AMDC (Advanced Multi-Destinations Route Computation) to efficiently plan a route that satisfies deadline requirements and optimizes another criterion such as trip cost. To the best of our knowledge, this is the first work on route planning that considers multiple deadlines for multi-destinations as well as optimizing trip cost, simultaneously. Experimental results demonstrate that our proposed algorithms deliver excellent performance in terms of efficiency and effectiveness.
Kinetic Competition Model and Size-Dependent Phase Selection in 1-D Nanostructures
(2012-06-01)
Chen, Yu
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Lin, Yung-Chen
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Huang, Chun-Wei
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Wang, Chun-Wen
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Chen, Lih-Juann
The first phase selection and the phase formation sequence between metal and silicon (Si) couples are indispensably significant to microelectronics. With increasing scaling of device dimension to nano regime, established thermodynamic and kinetic models in bulk and thin film fail to apply in 1-D nanostructures. Herein, we present an unique size-dependent first phase formation sequence in 1-D nanostructures, with Ni-Si as the model system. Interfacial-limited phase which forms the last in thin film, NiSi2, appears as the dominant first phase at 300-800 degrees C due to the elimination of continuous grain boundaries in 1-D suicides. On the other hand, theta-Ni2Si, the most competitive diffusion-limited phase takes over NiSi2 and wins out as the first phase in small diameter nanowires at 800 degrees C. Kinetic parameters extracted from in situ transmission electron microscope studies and a modified kinetic growth competition model quantitatively explain this observation. An estimated critical diameter from the model agrees reasonably well with observations.
Mining Trending High Utility Itemsets from Temporal Transaction Databases
(2018-01-01)
Hackman, Acquah
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Huang, Yu
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Tseng, Vincent S.
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交大名義發表
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資訊工程學系
In this paper, we address a novel and important topic in the area of HUI mining, named Trending High Utility Itemset (TrendHUI) mining, with the promise of expanding the applications of HUI mining with the power of trend analytics. We introduce formal definitions for TrendHUI mining and highlighted the importance of the TrendHUI output. Moreover, we develop two algorithms, Two-Phase Trending High Utility Itemset (TP-THUI) miner and Two-Phase Trending High Utility Itemset Guided (TP-THUI-Guided) miner. Both are two-phase algorithms that mine a complete set of TrendHUI. TP-THUI-Guided miner utilizes a remainder utility to calculate the temporal trend of a given itemset to reduce the search space effectively, such that the execution efficiency can be enhanced substantially. Through a series of experiments, using three different datasets, the proposed algorithms prove to be excellent for validity and efficiency. To the best of our knowledge, this is the first work addressing the promising topic on Trending High Utility Itemset mining, which is expected to facilitate numerous applications in data mining fields.
Robust Sensor-based Human Activity Recognition with Snippet Consensus Neural Networks
(2019-01-01)
Huang, Yu
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Lee, Meng-Chieh
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Tseng, Vincent S.
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Hsiao, Ching-Jui
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Huang, Chi-Chiang
Sensor-based human activity recognition is an important problem in pervasive computing, which has attracted lots of attention from the research community in the past few years. The existing relevant studies focused on using handcrafted features or machine learning-based methods to tackle this problem. However, these methods are usually limited to specific datasets, such that the generality is limited. Some methods are also limited to strict experimental environments, which do not take stability into consideration. In this paper, we propose a robust and novel deep learning-based framework, named Snippet Consensus Neural Networks (SCNet), which aims to conquer these challenges. Through a series of experiments, the proposed framework is verified to outperform seven state-of-the-art methods on five datasets in terms of not only accuracy but also generality and stability, averagely improving 10% on mean accuracy.
The Influence of Surface Oxide on the Growth of Metal/Semiconductor Nanowires
(2011-07-01)
Lu, Kuo-Chang
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Wu, Wen-Wei
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Ouyang, Hao
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Lin, Yung-Chen
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Huang, Yu
We report the critical effects of oxide on the growth of nanostructures through silicide formation. Under an in situ ultrahigh vacuum transmission electron microscope, it is observed from the conversion of Si nanowires into the metallic PtSi grains epitaxially through controlled reactions between lithographically defined Pt pads and Si nanowires. With oxide, instead of contact area, single crystal PtSi grains start forming either near the center between two adjacent pads or from the ends of Si nanowires, resulting in the heterostructure formation of Si/PtSi/Si. Without oxide, transformation from Si into PtSi begins at the contact area between them, resulting in the heterostructure formation of PtSi/Si/PtSi. The nanowire heterostructures have an atomically sharp interface with epitaxial relationships of Si(20-2)//PtSi(10-1) and Si[111]//PtSi[111]. Additionally, it has been observed that; the existence of oxide significantly affects not only the growth position but also the growth behavior and the growth rate by two orders of magnitude. Molecular dynamics simulations have been performed to support our experimental results and the proposed growth mechanisms. In addition to fundamental science, the significance of the study matters for future processing techniques in nanotechnology and related applications as well.