Browsing by Author "Huang, Yu-Ling"

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Dynamic Observation of Phase Transformation Behaviors in Indium(III) Selenide Nanowire Based Phase Change Memory
(2014-09-01)
Huang, Yu-Ling
;
Huang, Chun-Wei
;
Chen, Jui-Yuan
;
Ting, Yi-Hsin
;
Lu, Kuo-Chang
Phase change random access memory (PCRAM) has been extensively investigated for its potential applications in next-generation nonvolatile memory. In this study, indium(III) selenide (In2Se3) was selected due to its high resistivity ratio and lower programming current. Au/In2Se3-nanowire/Au phase change memory devices were fabricated and measured systematically in an in situ transmission electron microscope to perform a RESET/SET process under pulsed and dc voltage swept mode, respectively. During the switching, we observed the dynamic evolution of the phase transformation process. The switching behavior resulted from crystalline/amorphous change and revealed that a long pulse width would induce the amorphous or polycrystalline state by different pulse amplitudes, supporting the improvement of the writing speed, retention, and endurance of PCRAM.