Browsing by Author "Huang Chen-Shuo"

Now showing 1 - 3 of 3

Method for forming an interfacial passivation layer on the Ge semiconductor
(2011-12-06)
Liu Po-Tsun
;
Huang Chen-Shuo
;
Huang Yi-Ling
;
Cheng Szu-Lin
;
Sze Simon M.
The invention discloses a method for forming an interfacial passivation layer on the Ge semiconductor. The supercritical CO2 fluids is used to form an interfacial passivation layer between Ge channel and gate insulator layer, and improve the dielectric characteristics of gate insulator after high-temperature thermal annealing process.
Method for removing germanium suboxide
(2014-04-08)
Liu Po-Tsun
;
Huang Chen-Shuo
A method for removing germanium suboxide between a germanium (Ge) substrate and a dielectric layer made of metal oxide includes causing a supercritical fluid composition that includes a supercritical carbon dioxide fluid and an oxidant to diffuse into the germanium suboxide such that metal residues in the dielectric layer, the germanium suboxide and the oxidant are subjected to a redox reaction so as to reduce the germanium suboxide into germanium.
METHOD FOR REMOVING GERMANIUM SUBOXIDE
(2013-07-04)
Liu Po-Tsun
;
Huang Chen-Shuo
A method for removing germanium suboxide between a germanium (Ge) substrate and a dielectric layer made of metal oxide includes causing a supercritical fluid composition that includes a supercritical carbon dioxide fluid and an oxidant to diffuse into the germanium suboxide such that metal residues in the dielectric layer, the germanium suboxide and the oxidant are subjected to a redox reaction so as to reduce the germanium suboxide into germanium.