Browsing by Author "Hudait, Mantu"

Now showing 1 - 3 of 3

C-V characteristics of epitaxial germanium metal-oxide-semiconductor capacitor on GaAs substrate with ALD Al2O3 dielectric
(2012-09-01)
Tang, Shih Hsuan
;
Kuo, Chien I.
;
Hai Dang Trinh
;
Hudait, Mantu
;
Chang, Edward Yi
Epitaxial germanium metal-oxide-semiconductor capacitors (MOSCAP) were fabricated on GaAs substrate using atomic layer deposited Al2O3 gate dielectric with surface treatments including pure HF and HF plus rapid thermal oxidation (RTO). The electrical characteristics of 10 nm Al2O3/Ge MOSCAP showed p-type behavior with excellent C-V responses and low leakage current. Interface state density in the order of 10(11) eV(-1) cm(-2) was determined from the conductance method and the HF plus RTO treatment exhibits better Al2O3/Ge interface quality than that of pure HF treatment. (C) 2012 Elsevier B.V. All rights reserved.
Effect of Postdeposition Annealing Temperatures on Electrical Characteristics of Molecular-Beam-Deposited HfO2 on n-InAs/InGaAs Metal-Oxide-Semiconductor Capacitors
(2012-02-01)
Trinh, Hai-Dang
;
Lin, Yueh-Chin
;
Wang, Huan-Chung
;
Chang, Chia-Hua
;
Kakushima, Kuniyuki
The electrical characteristics of molecular-beam-deposited HfO2/n-InAs/InGaAs metal-oxide-semiconductor capacitors with different postdeposition annealing (PDA) temperatures (400-550 degrees C) are investigated. Results show that the sample with the PDA temperature of 500 degrees C exhibits the best capacitance-voltage (C-V) behavior with small frequency dispersion and small hysteresis. The X-ray photoelectron spectroscopy (XPS) spectra show the reduction of the amount of As-related oxides to below the XPS detection level when the PDA temperature is up to 500 degrees C. As the PDA temperature was increased to above 500 degrees C, As and In atoms seem to diffuse significantly into HfO2, resulting in the degradation of C-V behavior. (C) 2012 The Japan Society of Applied Physics
High quality Ge thin film grown by ultrahigh vacuum chemical vapor deposition on GaAs substrate
(2011-04-18)
Tang, Shih-Hsuan
;
Chang, Edward Yi
;
Hudait, Mantu
;
Maa, Jer-Shen
;
Liu, Chee-Wee
High-quality epitaxial Ge films were grown on GaAs substrates by ultrahigh vacuum chemical vapor deposition. High crystallinity and smooth surface were observed for these films by x-ray diffraction, transmission electron microscopy, and atomic force microscopy. Direct band gap emission (1550 nm) from this structure was detected by photoluminescence. Valence band offset of 0.16 eV at the Ge/GaAs interface was measured by x-ray photoelectron spectroscopy. N-type arsenic self-doping of 10(18)/cm(-3) in the grown Ge layers was determined using electrochemical capacitance voltage measurement. This structure can be used to fabricate p-channel metal-oxide-semiconductor field-effect transistor for the integration of Ge p-channel device with GaAs n-channel electronic device. (C) 2011 American Institute of Physics. [doi:10.1063/1.3580605]