Browsing by Author "Hung, B. F."

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HfSiON n-MOSFETs using low-work function HfSi chi gate
(2006-09-01)
Wu, C. H.
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Hung, B. F.
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Chin, Albert
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Wang, S. J.
;
Yen, F. Y.
The authors have developed a novel high-temperature stable HfSix gate for high-kappa HfSiON gate dielectric. After a 1000 degrees C RTA, the HfSix/HfSiON devices showed an effective work function of 4.27 eV and a peak electron mobility of 216 cm(2)/V (.) s at 1.6-nm equivalent oxide thickness, with additional merit of a process compatible with current very large scale integration fabrication lines.
High temperature stable [Ir3Si-TaN]/HfLaON CMOS with large work-function difference
(2006)
Wu, C. H.
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Hung, B. F.
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Chin, Albert
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Wang, S. J.
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Chen, W. J.
We report novel 1000 degrees C-stable [Ir3Si-TaN]/HfLaON CMOS for the first time, where the self-aligned and gate-first process are full compatible to current VLSI. Good phi(m.eff) of 5.08 and 4.24 eV, low V, of -0.10 and 0.18 V, high mobility of 84 and 217 cm(2)/Vs at 1.6 nm EOT, and small 850 degrees C BTI < 20 mV (10 MV/cm for 1 hr) are measured.
High-temperature stable HfLaON p-MOSFETs with high-work-function Ir3Si gate
(2007-04-01)
Wu, C. H.
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Hung, B. F.
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Chin, Albert
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Wang, S. J.
;
Wang, X. P.
We report a novel 1000 degrees C stable HfLaON p-MOSFET with Ir3Si gate. Low leakage current of 1.8 x 10(-5) A/cm(2) at 1 V above flat-band voltage, good effective work function of 5.08 eV, and high mobility of 84 cm(2)/V center dot s are simultaneously obtained at 1.6 nm equivalent oxide thickness. This gate-first p-MOSFET process with self-aligned ion implant and 1000 degrees C rapid thermal annealing is fully compatible to current very large scale integration fabrication lines.
High-temperature stable IrxSi gates with high work function on HfSiON p-MOSFETs
(2007-02-01)
Hung, B. F.
;
Wu, C. H.
;
Chin, Albert
;
Wang, S. J.
;
Yen, F. Y.
A novel 1000 degrees C-stable IrxSi gate on HfSiON is shown for the first time with full process compatibility to current very-large-scale-integration fabrication lines and proper effective work function of 4.95 eV at 1.6-nm equivalent-oxide thickness. In addition, small threshold voltages and good hole mobilities are measured in IrxSi/HfSiON transistors. The 1000 degrees C thermal stability above pure metal (900 degrees C only) is due to the inserted 5-nm amorphous Si, which also gives less Fermi-level pinning by the accumulated metallic full silicidation at the interface.
Low threshold voltage and high drive current poly-silicon thin film transistors using Ytterbium metal gate and LaAlO3 dielectric
(2007)
Hung, B. F.
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Wu, C. H.
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Chin, Albert
;
Wang, S. J.
;
Lin, J. W.
We have demonstrated high-performance metal-gate/high-k Ytterbiuni/LaAlO3 low-temperature poly-Si (LTPS) thin film transistors (TFTs) that have both high drive current capability and high voltage operation. The high drive current is due to the combined effect of low work-function Ytterbium metal gate and high gate capacitance by high-k LaAlO3 dielectric. The high breakdown voltage is also due to the high-k LaAlO3 dielectric to give larger physical thickness at the same equivalent oxide thickness (EOT). The good reliability and full process compatibility are the other important merits for Ytterbium/LaAlO3 device.